Multi-valued memristor programming method and device based on predetermined points

The invention discloses a multi-valued memristor programming method and device based on a predetermined point, and the method comprises the steps: presetting a programming parameter, and initializing a memristor unit; under the condition of grid voltage control, scanning the memristor unit, counting data and fitting the data to obtain a fitting curve; according to the fitting curve, obtaining an initial grid control voltage corresponding to a target test value of the test object, and initializing programming times; obtaining a measurement value of the test object, and judging whether the measurement value is within the target range; if the measured value is within the target range, programming succeeds, and the programming process is quitted; otherwise, performing grid voltage regulation on the memristor unit, and increasing programming times; judging whether the number of programming times is greater than the maximum number of programming times: if the number of programming times is greater than the maximum