Light emitting diode epitaxial wafer, light emitting diode chip and manufacturing method thereof

The invention discloses a light emitting diode epitaxial wafer (10), a light emitting diode chip (20) and a manufacturing method thereof. The light emitting diode epitaxial wafer (10) comprises a substrate (11); a protective layer (12) provided on one side of the substrate (11); the light-emitting structure (13) is arranged on one side, deviating from the substrate (11), of the protective layer (12); wherein the light-emitting structure (13) comprises a light-emitting layer (132), and the band gap of the protective layer (12) is smaller than or equal to the band gap of the light-emitting layer (132). 一种发光二极管外延片(10)、发光二极管芯片(20)及其制作方法，该发光二极管外延片(10)包括：衬底(11)；保护层(12)，设于该衬底(11)的一侧上；发光结构(13)，设于该保护层(12)背离该衬底(11)的一侧上；其中，该发光结构(13)包括发光层(132)，且该保护层(12)的带隙小于等于该发光层(132)的带隙。