Self-healing circuit of low-temperature-drift band-gap reference source under influence of HCI effect
The invention discloses a self-healing circuit of a low-temperature-drift band-gap reference source under the influence of an HCI effect, and relates to the technical field of electrics, the self-healing circuit comprises a curvature compensation circuit, an on-chip monitoring circuit and a pluralit...
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| creator | ZHANG JUN'AN DING CHAOYUAN LI CHAO LI TIEHU ZHANG QINGWEI |
| description | The invention discloses a self-healing circuit of a low-temperature-drift band-gap reference source under the influence of an HCI effect, and relates to the technical field of electrics, the self-healing circuit comprises a curvature compensation circuit, an on-chip monitoring circuit and a plurality of analog controller circuits, the analog controller circuits are used for generating proper body bias voltage and feeding back the proper body bias voltage to a low-temperature-drift band-gap reference source circuit, and the low-temperature-drift band-gap reference source circuit is connected with the low-temperature-drift band-gap reference source circuit. And performing voltage compensation on the plurality of first NMOS tubes. According to the on-chip monitoring circuit, a curvature compensation circuit is copied, and the variation of the threshold voltage of the NMOS transistor caused by the HCI effect can be accurately monitored. In the self-healing circuit provided by the invention, the increment of the t |
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And performing voltage compensation on the plurality of first NMOS tubes. According to the on-chip monitoring circuit, a curvature compensation circuit is copied, and the variation of the threshold voltage of the NMOS transistor caused by the HCI effect can be accurately monitored. 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And performing voltage compensation on the plurality of first NMOS tubes. According to the on-chip monitoring circuit, a curvature compensation circuit is copied, and the variation of the threshold voltage of the NMOS transistor caused by the HCI effect can be accurately monitored. 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And performing voltage compensation on the plurality of first NMOS tubes. According to the on-chip monitoring circuit, a curvature compensation circuit is copied, and the variation of the threshold voltage of the NMOS transistor caused by the HCI effect can be accurately monitored. In the self-healing circuit provided by the invention, the increment of the t</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CONTROLLING PHYSICS REGULATING SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES |
| title | Self-healing circuit of low-temperature-drift band-gap reference source under influence of HCI effect |
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