Method for 3D volume detection of semiconductor wafers with improved yield

A system and method for volumetric detection of a semiconductor wafer with improved yield is provided. The system and method are configured for grinding and imaging a reduced number or area of appropriate cross-sectional surfaces in a detection volume, and determining detection parameters of a 3D ob...

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Bibliographische Detailangaben
Hauptverfasser: NEWMAN JON T, AVISHAI, ALI, THOMAS KORB, KLOCHKOV DMITRY, FOCA, EDOARDO, BUXBAUM ANDREW
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A system and method for volumetric detection of a semiconductor wafer with improved yield is provided. The system and method are configured for grinding and imaging a reduced number or area of appropriate cross-sectional surfaces in a detection volume, and determining detection parameters of a 3D object from the cross-sectional surface image. The method and the device can be used for quantitative metering, defect detection, process monitoring, defect re-detection and detection of integrated circuits in semiconductor wafers. 提供了一种对具有提高产率的半导体晶片进行体积检测的系统和方法。该系统和方法被配置成用于对检测体积中的适当横截面表面的减少的数量或面积进行磨削和成像,并从该横截面表面图像确定3D对象的检测参数。该方法和装置可以用于半导体晶片内集成电路的定量计量、缺陷探测、制程监控、缺陷再检测和检测。