Semiconductor module
The invention provides a semiconductor module. Provided is a semiconductor module capable of reducing conduction loss and switching loss and preventing erroneous arcing. A pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor element is input to t...
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creator | SAKANO TATSUNORI ADACHI KENTO |
description | The invention provides a semiconductor module. Provided is a semiconductor module capable of reducing conduction loss and switching loss and preventing erroneous arcing. A pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor element is input to the drive device until any gate electrode of the first gate electrode, the second gate electrode, and the third gate electrode of the second semiconductor element reaches an on-voltage. The voltage of the third gate electrode of the first semiconductor element is shifted from a first off voltage lower than or equal to a threshold voltage to a second off voltage lower than the first off voltage. A pulse signal for turning off a first gate electrode and a second gate electrode of the second semiconductor element is input to the drive device until any gate electrode of the first gate electrode, the second gate electrode, and the third gate electrode of the first semiconductor element reaches an on-voltage. The voltage |
format | Patent |
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A pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor element is input to the drive device until any gate electrode of the first gate electrode, the second gate electrode, and the third gate electrode of the second semiconductor element reaches an on-voltage. The voltage of the third gate electrode of the first semiconductor element is shifted from a first off voltage lower than or equal to a threshold voltage to a second off voltage lower than the first off voltage. A pulse signal for turning off a first gate electrode and a second gate electrode of the second semiconductor element is input to the drive device until any gate electrode of the first gate electrode, the second gate electrode, and the third gate electrode of the first semiconductor element reaches an on-voltage. 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Provided is a semiconductor module capable of reducing conduction loss and switching loss and preventing erroneous arcing. A pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor element is input to the drive device until any gate electrode of the first gate electrode, the second gate electrode, and the third gate electrode of the second semiconductor element reaches an on-voltage. The voltage of the third gate electrode of the first semiconductor element is shifted from a first off voltage lower than or equal to a threshold voltage to a second off voltage lower than the first off voltage. A pulse signal for turning off a first gate electrode and a second gate electrode of the second semiconductor element is input to the drive device until any gate electrode of the first gate electrode, the second gate electrode, and the third gate electrode of the first semiconductor element reaches an on-voltage. 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Provided is a semiconductor module capable of reducing conduction loss and switching loss and preventing erroneous arcing. A pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor element is input to the drive device until any gate electrode of the first gate electrode, the second gate electrode, and the third gate electrode of the second semiconductor element reaches an on-voltage. The voltage of the third gate electrode of the first semiconductor element is shifted from a first off voltage lower than or equal to a threshold voltage to a second off voltage lower than the first off voltage. A pulse signal for turning off a first gate electrode and a second gate electrode of the second semiconductor element is input to the drive device until any gate electrode of the first gate electrode, the second gate electrode, and the third gate electrode of the first semiconductor element reaches an on-voltage. The voltage</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES |
title | Semiconductor module |
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