IGBT device and preparation method thereof

The invention discloses an IGBT (Insulated Gate Bipolar Translator) device and a preparation method thereof. The device comprises a substrate; the super junction structure layer comprises a first epitaxial layer, a first conductive type epitaxial layer and a second conductive type epitaxial layer; t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WU YUZHOU, YU JIUHONG, CAI SHIYAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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