Silicon carbide crystal growth lifting device
The invention provides a silicon carbide crystal growth lifting device. The silicon carbide crystal growth lifting device comprises a lifting rod; the seed crystal support is connected with one end of the lifting rod and comprises a first surface and a second surface which are opposite to each other...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a silicon carbide crystal growth lifting device. The silicon carbide crystal growth lifting device comprises a lifting rod; the seed crystal support is connected with one end of the lifting rod and comprises a first surface and a second surface which are opposite to each other; the seed crystal is arranged on the first surface of the seed crystal support; the first cooling channel comprises a first inlet pipe, a first outlet pipe and a first non-equidistant spiral pipe; the second cooling channel comprises a second inlet pipe, a second outlet pipe and a second non-equidistant spiral pipe; wherein the first non-equidistant spiral pipe and the second non-equidistant spiral pipe are distributed in the seed crystal support in a central symmetry manner. According to the invention, the surface temperature of the seed crystal can be distributed more uniformly, and the condition of non-uniform growth of the silicon carbide crystal is reduced; meanwhile, a plurality of convex blocks are arranged |
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