Manufacturing method of semiconductor structure and semiconductor structure

The invention relates to a manufacturing method of a semiconductor structure and the semiconductor structure, and relates to the field of integrated circuits, and the method comprises the steps: providing a substrate, forming a fin part on the substrate, forming a gate structure on the substrate, and enabling the gate structure to extend on the substrate and cover a part of the top surface and a part of the side wall of the fin part; forming a mask layer on the substrate and the gate structure, wherein the mask layer exposes part of the top surfaces of the fin parts on the two sides of the gate structure; etching the fin part according to the mask layer, and forming a first hole and a second hole in the fin part at the two sides of the gate structure; under a first process condition, first gas is adopted to treat the mask layer, the mask layer is removed through ashing, and the temperature of the first process condition is higher than 100 DEG C; and epitaxially growing germanium-silicon in the first hole and