PMOS device and preparation method thereof

The invention provides a PMOS device and a preparation method thereof, the PMOS device comprises a gate structure located on a substrate, a source electrode and a drain electrode, the source electrode and the drain electrode are located in the substrate on the two sides of the gate structure, the ga...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG PENGPENG, XU CHUANJIN, WANG QI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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