Dynamic junction temperature measuring device based on SiC MOSFET threshold voltage

The invention relates to a dynamic junction temperature measuring device based on a SiC MOSFET threshold voltage, and the device comprises a current detection part which is connected with a source electrode of a measured SiC MOSFET in series, and is used for generating a positive pulse signal when t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHU FEIFEI, ZHAO WEIDUO, HE CAILIN, YAN HAO, HAN HAO, DUAN YAOLONG, YU QIHONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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