Capacitor wafer, preparation method thereof and semiconductor device

The invention discloses a capacitor wafer and a preparation method thereof, and a semiconductor device, and relates to the field of semiconductor technologies, the minimum thickness of a dielectric layer formed for the first time is larger than the lower limit of a target thickness range, and then t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG SUDONG, ZUO CHENGJIE, HE JUN, ZHOU ZHIHU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!