Data recovery device and method of memristor
The invention discloses a memristor data recovery device and method, the device comprises a memory and a voltage output circuit, the memory is used for connecting memristors in a memristor array and is used for recording initial level signals of the memristors, the initial level signals are used for...
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creator | DAI GUOSHU LU HAODONG LI JIN RONG ZEREN LIU ZHEN CHEN XIAOMEI |
description | The invention discloses a memristor data recovery device and method, the device comprises a memory and a voltage output circuit, the memory is used for connecting memristors in a memristor array and is used for recording initial level signals of the memristors, the initial level signals are used for indicating original resistance value states of the memristors before operation, and the voltage output circuit is used for outputting the original resistance value states of the memristors before operation. When the resistance value state of the memristor needs to be recovered, a corresponding voltage output enable signal can be sent to the voltage output circuit, so that the voltage output circuit generates a corresponding forward voltage signal or a backward voltage signal according to the resistance value state of the memristor recorded by the memory and applies the forward voltage signal or the backward voltage signal to the memristor; and the resistance value of the memristor is recovered to the original resi |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118351914A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118351914A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118351914A3</originalsourceid><addsrcrecordid>eNrjZNBxSSxJVChKTc4vSy2qVEhJLctMTlVIzEtRyE0tychPUchPA7JyizKLS_KLeBhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoaGFsamhpaGJozExagB6MymZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Data recovery device and method of memristor</title><source>esp@cenet</source><creator>DAI GUOSHU ; LU HAODONG ; LI JIN ; RONG ZEREN ; LIU ZHEN ; CHEN XIAOMEI</creator><creatorcontrib>DAI GUOSHU ; LU HAODONG ; LI JIN ; RONG ZEREN ; LIU ZHEN ; CHEN XIAOMEI</creatorcontrib><description>The invention discloses a memristor data recovery device and method, the device comprises a memory and a voltage output circuit, the memory is used for connecting memristors in a memristor array and is used for recording initial level signals of the memristors, the initial level signals are used for indicating original resistance value states of the memristors before operation, and the voltage output circuit is used for outputting the original resistance value states of the memristors before operation. When the resistance value state of the memristor needs to be recovered, a corresponding voltage output enable signal can be sent to the voltage output circuit, so that the voltage output circuit generates a corresponding forward voltage signal or a backward voltage signal according to the resistance value state of the memristor recorded by the memory and applies the forward voltage signal or the backward voltage signal to the memristor; and the resistance value of the memristor is recovered to the original resi</description><language>chi ; eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240716&DB=EPODOC&CC=CN&NR=118351914A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240716&DB=EPODOC&CC=CN&NR=118351914A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAI GUOSHU</creatorcontrib><creatorcontrib>LU HAODONG</creatorcontrib><creatorcontrib>LI JIN</creatorcontrib><creatorcontrib>RONG ZEREN</creatorcontrib><creatorcontrib>LIU ZHEN</creatorcontrib><creatorcontrib>CHEN XIAOMEI</creatorcontrib><title>Data recovery device and method of memristor</title><description>The invention discloses a memristor data recovery device and method, the device comprises a memory and a voltage output circuit, the memory is used for connecting memristors in a memristor array and is used for recording initial level signals of the memristors, the initial level signals are used for indicating original resistance value states of the memristors before operation, and the voltage output circuit is used for outputting the original resistance value states of the memristors before operation. When the resistance value state of the memristor needs to be recovered, a corresponding voltage output enable signal can be sent to the voltage output circuit, so that the voltage output circuit generates a corresponding forward voltage signal or a backward voltage signal according to the resistance value state of the memristor recorded by the memory and applies the forward voltage signal or the backward voltage signal to the memristor; and the resistance value of the memristor is recovered to the original resi</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBxSSxJVChKTc4vSy2qVEhJLctMTlVIzEtRyE0tychPUchPA7JyizKLS_KLeBhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoaGFsamhpaGJozExagB6MymZ</recordid><startdate>20240716</startdate><enddate>20240716</enddate><creator>DAI GUOSHU</creator><creator>LU HAODONG</creator><creator>LI JIN</creator><creator>RONG ZEREN</creator><creator>LIU ZHEN</creator><creator>CHEN XIAOMEI</creator><scope>EVB</scope></search><sort><creationdate>20240716</creationdate><title>Data recovery device and method of memristor</title><author>DAI GUOSHU ; LU HAODONG ; LI JIN ; RONG ZEREN ; LIU ZHEN ; CHEN XIAOMEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118351914A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>DAI GUOSHU</creatorcontrib><creatorcontrib>LU HAODONG</creatorcontrib><creatorcontrib>LI JIN</creatorcontrib><creatorcontrib>RONG ZEREN</creatorcontrib><creatorcontrib>LIU ZHEN</creatorcontrib><creatorcontrib>CHEN XIAOMEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAI GUOSHU</au><au>LU HAODONG</au><au>LI JIN</au><au>RONG ZEREN</au><au>LIU ZHEN</au><au>CHEN XIAOMEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Data recovery device and method of memristor</title><date>2024-07-16</date><risdate>2024</risdate><abstract>The invention discloses a memristor data recovery device and method, the device comprises a memory and a voltage output circuit, the memory is used for connecting memristors in a memristor array and is used for recording initial level signals of the memristors, the initial level signals are used for indicating original resistance value states of the memristors before operation, and the voltage output circuit is used for outputting the original resistance value states of the memristors before operation. When the resistance value state of the memristor needs to be recovered, a corresponding voltage output enable signal can be sent to the voltage output circuit, so that the voltage output circuit generates a corresponding forward voltage signal or a backward voltage signal according to the resistance value state of the memristor recorded by the memory and applies the forward voltage signal or the backward voltage signal to the memristor; and the resistance value of the memristor is recovered to the original resi</abstract><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | Data recovery device and method of memristor |
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