Bipolar device and manufacturing method thereof

The invention provides a bipolar device and a manufacturing method thereof.The method comprises the steps that an SOI substrate is provided, the SOI substrate comprises top layer silicon, a buried oxide layer and top layer silicon which are sequentially arranged from bottom to top, a plurality of sh...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHU QIANGTAO, WANG TAO, WANG PENGPENG, KONG FANYOU, ZHANG HONGGUANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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