InSb infrared detector chip assembly based on ring hole structure and preparation method thereof
The invention provides an InSb infrared detector chip assembly based on a ring hole structure, and also provides a preparation method of the assembly, and the method comprises the steps: forming a SiON passivation layer on the surface of an N-type InSb wafer; the passivated wafer and a reading circu...
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| creator | FANG WENDE SONG JIANGMENG DAI XIAOYU LI XINGPENG ZHOU SHUAIKUN CHEN HUANHUAN WEI JINCHAO WU XINXIU |
| description | The invention provides an InSb infrared detector chip assembly based on a ring hole structure, and also provides a preparation method of the assembly, and the method comprises the steps: forming a SiON passivation layer on the surface of an N-type InSb wafer; the passivated wafer and a reading circuit are attached and solidified, and then the wafer is thinned; performing photoetching on the surface of the wafer to form a ring hole channel; injecting Be ions into the InSb layer in the annular hole channel region; electrodes are deposited in the annular hole channel and on the surface of the common electrode area; and depositing a SiO layer, then carrying out photoetching to expose the ring hole channel and the common electrode region, and etching the ring hole channel and the common electrode region to remove the SiO layer. According to the preparation method, the production efficiency and the yield of the InSb detector can be improved, and the production cost is reduced; according to the invention, the prepar |
| format | Patent |
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According to the preparation method, the production efficiency and the yield of the InSb detector can be improved, and the production cost is reduced; according to the invention, the prepar</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240705&DB=EPODOC&CC=CN&NR=118299391A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240705&DB=EPODOC&CC=CN&NR=118299391A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FANG WENDE</creatorcontrib><creatorcontrib>SONG JIANGMENG</creatorcontrib><creatorcontrib>DAI XIAOYU</creatorcontrib><creatorcontrib>LI XINGPENG</creatorcontrib><creatorcontrib>ZHOU SHUAIKUN</creatorcontrib><creatorcontrib>CHEN HUANHUAN</creatorcontrib><creatorcontrib>WEI JINCHAO</creatorcontrib><creatorcontrib>WU XINXIU</creatorcontrib><title>InSb infrared detector chip assembly based on ring hole structure and preparation method thereof</title><description>The invention provides an InSb infrared detector chip assembly based on a ring hole structure, and also provides a preparation method of the assembly, and the method comprises the steps: forming a SiON passivation layer on the surface of an N-type InSb wafer; the passivated wafer and a reading circuit are attached and solidified, and then the wafer is thinned; performing photoetching on the surface of the wafer to form a ring hole channel; injecting Be ions into the InSb layer in the annular hole channel region; electrodes are deposited in the annular hole channel and on the surface of the common electrode area; and depositing a SiO layer, then carrying out photoetching to expose the ring hole channel and the common electrode region, and etching the ring hole channel and the common electrode region to remove the SiO layer. According to the preparation method, the production efficiency and the yield of the InSb detector can be improved, and the production cost is reduced; according to the invention, the prepar</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjESgjAQRmEaC0e9w3oAC6SR0mF0tLHRHpfkh2QGksxmKby9FB7A6hXvWxfve3h25EMvLLBkoTAahYzziThnTN34oY7zMmMg8WEgF0dQVpmNzgLiYCkJEgurX8wEddGSOghivy1WPY8Zu183xf56eTW3A1JskRMbBGjbPMrydKzrqi7P1T_mC7-MPX0</recordid><startdate>20240705</startdate><enddate>20240705</enddate><creator>FANG WENDE</creator><creator>SONG JIANGMENG</creator><creator>DAI XIAOYU</creator><creator>LI XINGPENG</creator><creator>ZHOU SHUAIKUN</creator><creator>CHEN HUANHUAN</creator><creator>WEI JINCHAO</creator><creator>WU XINXIU</creator><scope>EVB</scope></search><sort><creationdate>20240705</creationdate><title>InSb infrared detector chip assembly based on ring hole structure and preparation method thereof</title><author>FANG WENDE ; SONG JIANGMENG ; DAI XIAOYU ; LI XINGPENG ; ZHOU SHUAIKUN ; CHEN HUANHUAN ; WEI JINCHAO ; WU XINXIU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118299391A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FANG WENDE</creatorcontrib><creatorcontrib>SONG JIANGMENG</creatorcontrib><creatorcontrib>DAI XIAOYU</creatorcontrib><creatorcontrib>LI XINGPENG</creatorcontrib><creatorcontrib>ZHOU SHUAIKUN</creatorcontrib><creatorcontrib>CHEN HUANHUAN</creatorcontrib><creatorcontrib>WEI JINCHAO</creatorcontrib><creatorcontrib>WU XINXIU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FANG WENDE</au><au>SONG JIANGMENG</au><au>DAI XIAOYU</au><au>LI XINGPENG</au><au>ZHOU SHUAIKUN</au><au>CHEN HUANHUAN</au><au>WEI JINCHAO</au><au>WU XINXIU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>InSb infrared detector chip assembly based on ring hole structure and preparation method thereof</title><date>2024-07-05</date><risdate>2024</risdate><abstract>The invention provides an InSb infrared detector chip assembly based on a ring hole structure, and also provides a preparation method of the assembly, and the method comprises the steps: forming a SiON passivation layer on the surface of an N-type InSb wafer; the passivated wafer and a reading circuit are attached and solidified, and then the wafer is thinned; performing photoetching on the surface of the wafer to form a ring hole channel; injecting Be ions into the InSb layer in the annular hole channel region; electrodes are deposited in the annular hole channel and on the surface of the common electrode area; and depositing a SiO layer, then carrying out photoetching to expose the ring hole channel and the common electrode region, and etching the ring hole channel and the common electrode region to remove the SiO layer. According to the preparation method, the production efficiency and the yield of the InSb detector can be improved, and the production cost is reduced; according to the invention, the prepar</abstract><oa>free_for_read</oa></addata></record> |
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| title | InSb infrared detector chip assembly based on ring hole structure and preparation method thereof |
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