Semiconductor microscope based on double-back-group technology
The invention relates to the technical field of microscopes, and particularly discloses a semiconductor microscope based on a double-back-group technology, which comprises an objective lens, a differential interference comparison module, a first lens barrel, a second lens barrel, a third lens barrel...
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creator | TAN HUI ZHANG QINGXIANG ZHENG XIAOZE PAN GUANJIAN CHEN YINGTAO LI YILIN CHEN AOHUISI |
description | The invention relates to the technical field of microscopes, and particularly discloses a semiconductor microscope based on a double-back-group technology, which comprises an objective lens, a differential interference comparison module, a first lens barrel, a second lens barrel, a third lens barrel, a first polarizer, a second polarizer, an optical filter, an eyepiece, an illuminating lens group and a light emitting diode, the objective lens, the differential interference comparison module, the first lens barrel, the third lens barrel, the second polarizer, the optical filter and the eyepiece are sequentially arranged along the direction of an optical axis; the first polarizer, the second lens cone, the illumination lens group and the light emitting diode are arranged in sequence along the direction of an optical axis; according to the semiconductor microscope based on the double-back-group technology, superposition of the depth of field is achieved through light beam superposition, the problem that the dept |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118295117A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118295117A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118295117A3</originalsourceid><addsrcrecordid>eNrjZLALTs3NTM7PSylNLskvUgCyi_KLk_MLUhWSEotTUxTy8xRS8kuTclJ1kxKTs3XTi_JLCxRKUpMz8vJz8tMreRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoaGFkaWpoaG5ozExagCT1zEJ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor microscope based on double-back-group technology</title><source>esp@cenet</source><creator>TAN HUI ; ZHANG QINGXIANG ; ZHENG XIAOZE ; PAN GUANJIAN ; CHEN YINGTAO ; LI YILIN ; CHEN AOHUISI</creator><creatorcontrib>TAN HUI ; ZHANG QINGXIANG ; ZHENG XIAOZE ; PAN GUANJIAN ; CHEN YINGTAO ; LI YILIN ; CHEN AOHUISI</creatorcontrib><description>The invention relates to the technical field of microscopes, and particularly discloses a semiconductor microscope based on a double-back-group technology, which comprises an objective lens, a differential interference comparison module, a first lens barrel, a second lens barrel, a third lens barrel, a first polarizer, a second polarizer, an optical filter, an eyepiece, an illuminating lens group and a light emitting diode, the objective lens, the differential interference comparison module, the first lens barrel, the third lens barrel, the second polarizer, the optical filter and the eyepiece are sequentially arranged along the direction of an optical axis; the first polarizer, the second lens cone, the illumination lens group and the light emitting diode are arranged in sequence along the direction of an optical axis; according to the semiconductor microscope based on the double-back-group technology, superposition of the depth of field is achieved through light beam superposition, the problem that the dept</description><language>chi ; eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS ; TESTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240705&DB=EPODOC&CC=CN&NR=118295117A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240705&DB=EPODOC&CC=CN&NR=118295117A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAN HUI</creatorcontrib><creatorcontrib>ZHANG QINGXIANG</creatorcontrib><creatorcontrib>ZHENG XIAOZE</creatorcontrib><creatorcontrib>PAN GUANJIAN</creatorcontrib><creatorcontrib>CHEN YINGTAO</creatorcontrib><creatorcontrib>LI YILIN</creatorcontrib><creatorcontrib>CHEN AOHUISI</creatorcontrib><title>Semiconductor microscope based on double-back-group technology</title><description>The invention relates to the technical field of microscopes, and particularly discloses a semiconductor microscope based on a double-back-group technology, which comprises an objective lens, a differential interference comparison module, a first lens barrel, a second lens barrel, a third lens barrel, a first polarizer, a second polarizer, an optical filter, an eyepiece, an illuminating lens group and a light emitting diode, the objective lens, the differential interference comparison module, the first lens barrel, the third lens barrel, the second polarizer, the optical filter and the eyepiece are sequentially arranged along the direction of an optical axis; the first polarizer, the second lens cone, the illumination lens group and the light emitting diode are arranged in sequence along the direction of an optical axis; according to the semiconductor microscope based on the double-back-group technology, superposition of the depth of field is achieved through light beam superposition, the problem that the dept</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALTs3NTM7PSylNLskvUgCyi_KLk_MLUhWSEotTUxTy8xRS8kuTclJ1kxKTs3XTi_JLCxRKUpMz8vJz8tMreRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoaGFkaWpoaG5ozExagCT1zEJ</recordid><startdate>20240705</startdate><enddate>20240705</enddate><creator>TAN HUI</creator><creator>ZHANG QINGXIANG</creator><creator>ZHENG XIAOZE</creator><creator>PAN GUANJIAN</creator><creator>CHEN YINGTAO</creator><creator>LI YILIN</creator><creator>CHEN AOHUISI</creator><scope>EVB</scope></search><sort><creationdate>20240705</creationdate><title>Semiconductor microscope based on double-back-group technology</title><author>TAN HUI ; ZHANG QINGXIANG ; ZHENG XIAOZE ; PAN GUANJIAN ; CHEN YINGTAO ; LI YILIN ; CHEN AOHUISI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118295117A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TAN HUI</creatorcontrib><creatorcontrib>ZHANG QINGXIANG</creatorcontrib><creatorcontrib>ZHENG XIAOZE</creatorcontrib><creatorcontrib>PAN GUANJIAN</creatorcontrib><creatorcontrib>CHEN YINGTAO</creatorcontrib><creatorcontrib>LI YILIN</creatorcontrib><creatorcontrib>CHEN AOHUISI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAN HUI</au><au>ZHANG QINGXIANG</au><au>ZHENG XIAOZE</au><au>PAN GUANJIAN</au><au>CHEN YINGTAO</au><au>LI YILIN</au><au>CHEN AOHUISI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor microscope based on double-back-group technology</title><date>2024-07-05</date><risdate>2024</risdate><abstract>The invention relates to the technical field of microscopes, and particularly discloses a semiconductor microscope based on a double-back-group technology, which comprises an objective lens, a differential interference comparison module, a first lens barrel, a second lens barrel, a third lens barrel, a first polarizer, a second polarizer, an optical filter, an eyepiece, an illuminating lens group and a light emitting diode, the objective lens, the differential interference comparison module, the first lens barrel, the third lens barrel, the second polarizer, the optical filter and the eyepiece are sequentially arranged along the direction of an optical axis; the first polarizer, the second lens cone, the illumination lens group and the light emitting diode are arranged in sequence along the direction of an optical axis; according to the semiconductor microscope based on the double-back-group technology, superposition of the depth of field is achieved through light beam superposition, the problem that the dept</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS TESTING |
title | Semiconductor microscope based on double-back-group technology |
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