Preparation method of semiconductor structure
According to the preparation method of the semiconductor structure provided by the invention, the dry film is used as the dielectric layer, the metal seed layer is formed on the surface of the groove in the dry film through chemical plating, and then the metal layer is formed through electroplating,...
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| creator | YIN JIASHAN WANG XIAO XUE XINGTAO ZHOU ZUYUAN |
| description | According to the preparation method of the semiconductor structure provided by the invention, the dry film is used as the dielectric layer, the metal seed layer is formed on the surface of the groove in the dry film through chemical plating, and then the metal layer is formed through electroplating, so that the metal layer which is completely filled in the groove can be ensured to meet the electroplating requirement of the groove.
本发明提供一种半导体结构的制备方法，采用干膜作为介质层，通过化学镀在干膜中的沟槽表面形成金属种子层，而后进行电镀形成金属层，可确保在沟槽中形成填充完好的金属层，以满足沟槽电镀要求。 |
| format | Patent |
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本发明提供一种半导体结构的制备方法，采用干膜作为介质层，通过化学镀在干膜中的沟槽表面形成金属种子层，而后进行电镀形成金属层，可确保在沟槽中形成填充完好的金属层，以满足沟槽电镀要求。</description><language>chi ; eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240702&DB=EPODOC&CC=CN&NR=118280845A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240702&DB=EPODOC&CC=CN&NR=118280845A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YIN JIASHAN</creatorcontrib><creatorcontrib>WANG XIAO</creatorcontrib><creatorcontrib>XUE XINGTAO</creatorcontrib><creatorcontrib>ZHOU ZUYUAN</creatorcontrib><title>Preparation method of semiconductor structure</title><description>According to the preparation method of the semiconductor structure provided by the invention, the dry film is used as the dielectric layer, the metal seed layer is formed on the surface of the groove in the dry film through chemical plating, and then the metal layer is formed through electroplating, so that the metal layer which is completely filled in the groove can be ensured to meet the electroplating requirement of the groove.
本发明提供一种半导体结构的制备方法，采用干膜作为介质层，通过化学镀在干膜中的沟槽表面形成金属种子层，而后进行电镀形成金属层，可确保在沟槽中形成填充完好的金属层，以满足沟槽电镀要求。</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNANKEotSCxKLMnMz1PITS3JyE9RyE9TKE7NzUzOz0spTS7JL1IoLikCMkqLUnkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GhhZGFgYWJqaMxMWoAEdwq6Q</recordid><startdate>20240702</startdate><enddate>20240702</enddate><creator>YIN JIASHAN</creator><creator>WANG XIAO</creator><creator>XUE XINGTAO</creator><creator>ZHOU ZUYUAN</creator><scope>EVB</scope></search><sort><creationdate>20240702</creationdate><title>Preparation method of semiconductor structure</title><author>YIN JIASHAN ; WANG XIAO ; XUE XINGTAO ; ZHOU ZUYUAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118280845A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YIN JIASHAN</creatorcontrib><creatorcontrib>WANG XIAO</creatorcontrib><creatorcontrib>XUE XINGTAO</creatorcontrib><creatorcontrib>ZHOU ZUYUAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YIN JIASHAN</au><au>WANG XIAO</au><au>XUE XINGTAO</au><au>ZHOU ZUYUAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of semiconductor structure</title><date>2024-07-02</date><risdate>2024</risdate><abstract>According to the preparation method of the semiconductor structure provided by the invention, the dry film is used as the dielectric layer, the metal seed layer is formed on the surface of the groove in the dry film through chemical plating, and then the metal layer is formed through electroplating, so that the metal layer which is completely filled in the groove can be ensured to meet the electroplating requirement of the groove.
本发明提供一种半导体结构的制备方法，采用干膜作为介质层，通过化学镀在干膜中的沟槽表面形成金属种子层，而后进行电镀形成金属层，可确保在沟槽中形成填充完好的金属层，以满足沟槽电镀要求。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | Preparation method of semiconductor structure |
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