MOS type fast recovery diode chip structure and manufacturing method thereof

The invention discloses an MOS type fast recovery diode chip structure and a manufacturing method thereof. An N-drift region is arranged on a heavily doped N + substrate, a P region is arranged in an active region on the N-drift region, an N + region is arranged on the P region, the N + region and P...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RAO YONGPING, XU JING, SHEN YONGHONG, CHEN LIPING, WANG LING, XIANG JIANHUI, WANG MINAN, WU XIANLONG, RAO ZUGANG, LIAO LIANGLIANG, ZHENG CHUNMING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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