Memory device, method of operating same, and memory system including same
A memory device, a method of operating the same, and a memory system including the same are provided. The memory device includes: a non-volatile memory device including a plurality of regions, each of the plurality of regions including a plurality of logical addresses; and a memory controller config...
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creator | KWON JAE-YOUNG WANG HONG-MOON RO YANG-WOO JIN JUNHAO KIM JAE-SEOB |
description | A memory device, a method of operating the same, and a memory system including the same are provided. The memory device includes: a non-volatile memory device including a plurality of regions, each of the plurality of regions including a plurality of logical addresses; and a memory controller configured to control the non-volatile memory device, the memory controller including at least one buffer directly accessible by a host device, the at least one buffer each including at least one random write region and a write pointer, the write pointer is configured to store a location indicating a starting logical address of the at least one random write region, and the at least one buffer is configured to write write data into the random write region based on the location of the write pointer in response to receiving the write data from the host device.
提供了一种存储装置、操作其的方法及包括其的存储系统。所述存储装置包括:非易失性存储器件,所述非易失性存储器件包括多个区域,所述多个区域中的每个区域包括多个逻辑地址;和存储控制器,所述存储控制器被配置为控制所述非易失性存储器件,所述存储控制器包括主机装置可直接访问的至少一个缓冲区,所述至少一个缓冲区均包括至少一个随机写入区和写入指针 |
format | Patent |
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提供了一种存储装置、操作其的方法及包括其的存储系统。所述存储装置包括:非易失性存储器件,所述非易失性存储器件包括多个区域,所述多个区域中的每个区域包括多个逻辑地址;和存储控制器,所述存储控制器被配置为控制所述非易失性存储器件,所述存储控制器包括主机装置可直接访问的至少一个缓冲区,所述至少一个缓冲区均包括至少一个随机写入区和写入指针</description><language>chi ; eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240628&DB=EPODOC&CC=CN&NR=118262753A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240628&DB=EPODOC&CC=CN&NR=118262753A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON JAE-YOUNG</creatorcontrib><creatorcontrib>WANG HONG-MOON</creatorcontrib><creatorcontrib>RO YANG-WOO</creatorcontrib><creatorcontrib>JIN JUNHAO</creatorcontrib><creatorcontrib>KIM JAE-SEOB</creatorcontrib><title>Memory device, method of operating same, and memory system including same</title><description>A memory device, a method of operating the same, and a memory system including the same are provided. The memory device includes: a non-volatile memory device including a plurality of regions, each of the plurality of regions including a plurality of logical addresses; and a memory controller configured to control the non-volatile memory device, the memory controller including at least one buffer directly accessible by a host device, the at least one buffer each including at least one random write region and a write pointer, the write pointer is configured to store a location indicating a starting logical address of the at least one random write region, and the at least one buffer is configured to write write data into the random write region based on the location of the write pointer in response to receiving the write data from the host device.
提供了一种存储装置、操作其的方法及包括其的存储系统。所述存储装置包括:非易失性存储器件,所述非易失性存储器件包括多个区域,所述多个区域中的每个区域包括多个逻辑地址;和存储控制器,所述存储控制器被配置为控制所述非易失性存储器件,所述存储控制器包括主机装置可直接访问的至少一个缓冲区,所述至少一个缓冲区均包括至少一个随机写入区和写入指针</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD0Tc3NL6pUSEkty0xO1VHITS3JyE9RyE9TyC9ILUosycxLVyhOzAXKJOalAGXBiosri0tScxUy85JzSlNgKngYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GhhZGZkbmpsaMxMWoAqso0UA</recordid><startdate>20240628</startdate><enddate>20240628</enddate><creator>KWON JAE-YOUNG</creator><creator>WANG HONG-MOON</creator><creator>RO YANG-WOO</creator><creator>JIN JUNHAO</creator><creator>KIM JAE-SEOB</creator><scope>EVB</scope></search><sort><creationdate>20240628</creationdate><title>Memory device, method of operating same, and memory system including same</title><author>KWON JAE-YOUNG ; WANG HONG-MOON ; RO YANG-WOO ; JIN JUNHAO ; KIM JAE-SEOB</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118262753A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON JAE-YOUNG</creatorcontrib><creatorcontrib>WANG HONG-MOON</creatorcontrib><creatorcontrib>RO YANG-WOO</creatorcontrib><creatorcontrib>JIN JUNHAO</creatorcontrib><creatorcontrib>KIM JAE-SEOB</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON JAE-YOUNG</au><au>WANG HONG-MOON</au><au>RO YANG-WOO</au><au>JIN JUNHAO</au><au>KIM JAE-SEOB</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Memory device, method of operating same, and memory system including same</title><date>2024-06-28</date><risdate>2024</risdate><abstract>A memory device, a method of operating the same, and a memory system including the same are provided. The memory device includes: a non-volatile memory device including a plurality of regions, each of the plurality of regions including a plurality of logical addresses; and a memory controller configured to control the non-volatile memory device, the memory controller including at least one buffer directly accessible by a host device, the at least one buffer each including at least one random write region and a write pointer, the write pointer is configured to store a location indicating a starting logical address of the at least one random write region, and the at least one buffer is configured to write write data into the random write region based on the location of the write pointer in response to receiving the write data from the host device.
提供了一种存储装置、操作其的方法及包括其的存储系统。所述存储装置包括:非易失性存储器件,所述非易失性存储器件包括多个区域,所述多个区域中的每个区域包括多个逻辑地址;和存储控制器,所述存储控制器被配置为控制所述非易失性存储器件,所述存储控制器包括主机装置可直接访问的至少一个缓冲区,所述至少一个缓冲区均包括至少一个随机写入区和写入指针</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | Memory device, method of operating same, and memory system including same |
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