Device for processing inner circle and outer circle of silicon carbide epitaxial wafer

The invention relates to the technical field of silicon carbide epitaxial wafer processing, in particular to silicon carbide epitaxial wafer inner and outer circle processing equipment, and solves the problem that the processing precision and the processing efficiency cannot be considered when the edge exceeding part of an epitaxial layer of a silicon carbide epitaxial wafer is processed. The machining equipment comprises a fixed base, a movable plate, a first tool set, a second tool set and a positioning assembly, the first tool set is arranged on the fixed base, the second tool set is arranged on the movable plate, the first tool set comprises a plurality of first tools evenly distributed around a second axis, and the second tool set comprises a plurality of second tools evenly distributed around the second axis. The positioning assembly comprises a first adjusting part, an annular first clamping plate and an annular second clamping plate, and the first adjusting part can drive the clamped silicon carbide e