Magnetic random storage array
The invention relates to the field of magnetic rotation storage, in particular to a magnetic random storage array which comprises an energy supply power source, bit lines and a plurality of bits. The bit comprises an MTJ unit and an electric connection structure; the MTJ unit is connected with other...
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| creator | ZHENG ZEJIE HE SHIKUN |
| description | The invention relates to the field of magnetic rotation storage, in particular to a magnetic random storage array which comprises an energy supply power source, bit lines and a plurality of bits. The bit comprises an MTJ unit and an electric connection structure; the MTJ unit is connected with other elements through the electric connection structure; the single bit line is connected with the plurality of bits in sequence; and the compensation resistance value of the electric connection structure is reduced along with the increase of the distance from the corresponding bit to the energy supply power supply along the bit line. According to the distance from the MTJ unit to the energy supply power supply along the bit line, different compensation resistors are introduced for the corresponding electric connection structures, so that the total resistance between the MTJ units at different positions and the energy supply power supply tends to be consistent, the consistency of erasing times of bits at different posi |
| format | Patent |
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The bit comprises an MTJ unit and an electric connection structure; the MTJ unit is connected with other elements through the electric connection structure; the single bit line is connected with the plurality of bits in sequence; and the compensation resistance value of the electric connection structure is reduced along with the increase of the distance from the corresponding bit to the energy supply power supply along the bit line. According to the distance from the MTJ unit to the energy supply power supply along the bit line, different compensation resistors are introduced for the corresponding electric connection structures, so that the total resistance between the MTJ units at different positions and the energy supply power supply tends to be consistent, the consistency of erasing times of bits at different posi</description><language>chi ; eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240621&DB=EPODOC&CC=CN&NR=118230781A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240621&DB=EPODOC&CC=CN&NR=118230781A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHENG ZEJIE</creatorcontrib><creatorcontrib>HE SHIKUN</creatorcontrib><title>Magnetic random storage array</title><description>The invention relates to the field of magnetic rotation storage, in particular to a magnetic random storage array which comprises an energy supply power source, bit lines and a plurality of bits. The bit comprises an MTJ unit and an electric connection structure; the MTJ unit is connected with other elements through the electric connection structure; the single bit line is connected with the plurality of bits in sequence; and the compensation resistance value of the electric connection structure is reduced along with the increase of the distance from the corresponding bit to the energy supply power supply along the bit line. According to the distance from the MTJ unit to the energy supply power supply along the bit line, different compensation resistors are introduced for the corresponding electric connection structures, so that the total resistance between the MTJ units at different positions and the energy supply power supply tends to be consistent, the consistency of erasing times of bits at different posi</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD1TUzPSy3JTFYoSsxLyc9VKC7JL0pMT1VILCpKrORhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqUDN8c5-hoYWRsYG5haGjsbEqAEAzDwkHw</recordid><startdate>20240621</startdate><enddate>20240621</enddate><creator>ZHENG ZEJIE</creator><creator>HE SHIKUN</creator><scope>EVB</scope></search><sort><creationdate>20240621</creationdate><title>Magnetic random storage array</title><author>ZHENG ZEJIE ; HE SHIKUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118230781A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHENG ZEJIE</creatorcontrib><creatorcontrib>HE SHIKUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHENG ZEJIE</au><au>HE SHIKUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetic random storage array</title><date>2024-06-21</date><risdate>2024</risdate><abstract>The invention relates to the field of magnetic rotation storage, in particular to a magnetic random storage array which comprises an energy supply power source, bit lines and a plurality of bits. The bit comprises an MTJ unit and an electric connection structure; the MTJ unit is connected with other elements through the electric connection structure; the single bit line is connected with the plurality of bits in sequence; and the compensation resistance value of the electric connection structure is reduced along with the increase of the distance from the corresponding bit to the energy supply power supply along the bit line. According to the distance from the MTJ unit to the energy supply power supply along the bit line, different compensation resistors are introduced for the corresponding electric connection structures, so that the total resistance between the MTJ units at different positions and the energy supply power supply tends to be consistent, the consistency of erasing times of bits at different posi</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Magnetic random storage array |
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