Semiconductor light-emitting element

A semiconductor light emitting element includes: a conductor light emitting sequence including a light emitting layer; the Bragg reflection layer is located on one side of the semiconductor light-emitting sequence, the Bragg reflection layer is formed by repeatedly stacking and distributing a first dielectric material layer with a first refractive index and a second dielectric material layer with a second refractive index, and the first refractive index is lower than the second refractive index; wherein the optical thickness of the second dielectric material layer is smaller than that of the first dielectric material layer. 一种半导体发光元件，其包括：导体发光序列，包括发光层；布拉格反射层，位于半导体发光序列的一侧，所述布拉格反射层为第一折射率的第一介质材料层和第二折射率的第二介质材料层重复堆叠分布形成，其中第一折射率低于第二折射率，其中所述第二介质材料层的光学厚度小于第一介质材料层的光学厚度。