Semiconductor power device and preparation method thereof

The invention provides a semiconductor power device and a preparation method thereof. The semiconductor power device comprises a drift layer located on one side of a semiconductor substrate layer; the gate structure is positioned on one side, deviating from the semiconductor substrate layer, of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XIE GENHUA, GOHO MASAKI, XIU DEQI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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