Semiconductor driving device and semiconductor module
The invention provides a semiconductor driving device and a semiconductor module capable of preventing false triggering of a semiconductor element. Each of the first semiconductor element and the second semiconductor element includes a first semiconductor element and a second semiconductor element....
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| creator | SAKANO TATSUNORI ADACHI KENTO |
| description | The invention provides a semiconductor driving device and a semiconductor module capable of preventing false triggering of a semiconductor element. Each of the first semiconductor element and the second semiconductor element includes a first semiconductor element and a second semiconductor element. Given # imgabs0 # where Vth3 is the threshold voltage of the third gate electrode, RCGsoft is the resistance value of the third OFF gate resistor, min (CCGsgc) is the minimum value of the voltage-dependent characteristics of the capacitance between the third gate electrode and the collector electrode, and dv/d is the time shift of the voltage at the time of ON
提供能够防止半导体元件的误触发的半导体驱动装置和半导体模块。在第一半导体元件和第二半导体元件的各半导体元件中，在将第三栅极电极的阈值电压设为Vth3、将第三关断栅极电阻的电阻值设为RCGsoff、将第三栅极电极与集电极电极之间的电容的电压依赖特性中的最小值设为min(CCGsgc)、将开通时的电压的时间位移设为dv/d时，满足#imgabs0# |
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提供能够防止半导体元件的误触发的半导体驱动装置和半导体模块。在第一半导体元件和第二半导体元件的各半导体元件中，在将第三栅极电极的阈值电压设为Vth3、将第三关断栅极电阻的电阻值设为RCGsoff、将第三栅极电极与集电极电极之间的电容的电压依赖特性中的最小值设为min(CCGsgc)、将开通时的电压的时间位移设为dv/d时，满足#imgabs0#</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE |
| title | Semiconductor driving device and semiconductor module |
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