Electroluminescent QLED device based on novel efficient hole generation structure and preparation method thereof

Electroluminescent QLED device based on novel efficient hole generation structure and preparation method thereof

The invention provides an electroluminescent QLED device based on a novel efficient hole generation structure and a preparation method of the electroluminescent QLED device, belongs to the technical field of display illumination, and aims to improve the luminescence performance of the electrolumines...

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Hauptverfasser: ZHAO SULING, ZHAO ZEBANG, QIAO PO, SONG DANDAN, LIANG ZHIQIN, XU ZHENG, GONG XIAOJIE
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Sprache:chi ; eng
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ELECTRICITY
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creator ZHAO SULING
ZHAO ZEBANG
QIAO PO
SONG DANDAN
LIANG ZHIQIN
XU ZHENG
GONG XIAOJIE
description The invention provides an electroluminescent QLED device based on a novel efficient hole generation structure and a preparation method of the electroluminescent QLED device, belongs to the technical field of display illumination, and aims to improve the luminescence performance of the electroluminescent QLED device. The first insulating layer, the hole generation layer, the hole transmission layer, the quantum dot light-emitting layer, the electron generation layer, the second insulating layer and the metal electrode are sequentially located on the surface of one side of the transparent substrate. Wherein the hole transport layer comprises a phosphorescence luminescent material and a hole transport material, the quantum dot luminescent layer comprises a quantum dot material, and the doping concentration of the phosphorescence luminescent material in the hole transport material is 1%-20%. The HOMO energy level of the phosphorescent light-emitting material is between the HOMO energy level of the hole transport
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The first insulating layer, the hole generation layer, the hole transmission layer, the quantum dot light-emitting layer, the electron generation layer, the second insulating layer and the metal electrode are sequentially located on the surface of one side of the transparent substrate. Wherein the hole transport layer comprises a phosphorescence luminescent material and a hole transport material, the quantum dot luminescent layer comprises a quantum dot material, and the doping concentration of the phosphorescence luminescent material in the hole transport material is 1%-20%. The HOMO energy level of the phosphorescent light-emitting material is between the HOMO energy level of the hole transport</abstract><oa>free_for_read</oa></addata></record>
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title Electroluminescent QLED device based on novel efficient hole generation structure and preparation method thereof
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