HgCdTe APD passivation layer, preparation method and application thereof

The invention discloses a tellurium-cadmium-mercury APD passivation layer, a preparation method and application thereof, and the method comprises the steps: carrying out the wet chemical corrosion of a liquid-phase epitaxial tellurium-cadmium-mercury material based on a tellurium-zinc-cadmium substr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FANG HANHAO, YANG YIHU, JIANG JUN, YANG CHAOWEI, ZHANG WENYU, WANG WEN, BAN XUEFENG, ZHANG YINGXU, WANG XUESONG, LI XIONGJUN, GUI XIHUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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