Method for improving copper filling capability

The invention provides a method for improving the copper filling capability, and the method comprises the steps: providing a semiconductor structure which is provided with a through hole and a groove, and enabling the top opening size of the through hole and the groove to be smaller than 60 nm; forming a copper barrier layer and a copper seed crystal layer on the bottom and the side wall of the through hole and the groove, wherein the copper seed crystal layer is formed on the surface of the copper barrier layer; and placing the semiconductor structure on which the copper barrier layer and the copper seed crystal layer are formed in an electroplating solution, carrying out first-step electroplating on the through hole and the groove with a current of 6-10A, carrying out second-step electroplating on the through hole and the groove with a current of 6-10A, and carrying out third-step electroplating on the through hole and the groove with a current of more than 30A. The problem that the filling effect is poor w