Method and apparatus for in-situ monitoring of chemical mechanical planarization (CMP) process

A method and apparatus for in situ monitoring of a chemical mechanical planarization (CMP) process are disclosed. In one aspect, a CMP system includes a carrier configured to hold a substrate, a platen supporting a polishing pad, an optical detector positioned on an opposite side of the polishing pa...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TROJAN DANIEL ROBERT, BRINDLEY JACOB
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PERFORMING OPERATIONS PHYSICS POLISHING SEMICONDUCTOR DEVICES TESTING TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!