Copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing
The invention provides a copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing, and relates to a copper etching liquid composition. The cleaning agent is prepared from hydrogen peroxide, sulfuric acid, ethylenediamine tetramethyleneph...
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creator | LIN RUIXIANG ZHENG HELI WU HANG HE PEIHAO ZHANG NIANCHUN ZHANG MUSHEN WU HONGXING YANG HOUGUI |
description | The invention provides a copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing, and relates to a copper etching liquid composition. The cleaning agent is prepared from hydrogen peroxide, sulfuric acid, ethylenediamine tetramethylenephosphonic acid, acetoxime, glycollic acid, phosphoric acid, L-malic acid, 1, 2, 3, 4, 5-pentahydroxyhexanoic acid, polyvinyl alcohol and pure water. In the copper etching process, Cu < 2 + > in the copper etching liquid composition can react with O < 2-> to generate black CuO, when the solution reaches a saturated state, black precipitates can be generated, and meanwhile, after the copper etching liquid medicine is concentrated, crystals can be generated. The copper etching liquid composition disclosed by the invention has relatively strong chelating ability, and can reduce the content of Cu < 2 + > in a solution and reduce the generation of CuO; ethylenediamine tetramethylenephosphonic acid is used as a chelating a |
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The cleaning agent is prepared from hydrogen peroxide, sulfuric acid, ethylenediamine tetramethylenephosphonic acid, acetoxime, glycollic acid, phosphoric acid, L-malic acid, 1, 2, 3, 4, 5-pentahydroxyhexanoic acid, polyvinyl alcohol and pure water. In the copper etching process, Cu < 2 + > in the copper etching liquid composition can react with O < 2-> to generate black CuO, when the solution reaches a saturated state, black precipitates can be generated, and meanwhile, after the copper etching liquid medicine is concentrated, crystals can be generated. The copper etching liquid composition disclosed by the invention has relatively strong chelating ability, and can reduce the content of Cu < 2 + > in a solution and reduce the generation of CuO; ethylenediamine tetramethylenephosphonic acid is used as a chelating a</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240531&DB=EPODOC&CC=CN&NR=118109820A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240531&DB=EPODOC&CC=CN&NR=118109820A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN RUIXIANG</creatorcontrib><creatorcontrib>ZHENG HELI</creatorcontrib><creatorcontrib>WU HANG</creatorcontrib><creatorcontrib>HE PEIHAO</creatorcontrib><creatorcontrib>ZHANG NIANCHUN</creatorcontrib><creatorcontrib>ZHANG MUSHEN</creatorcontrib><creatorcontrib>WU HONGXING</creatorcontrib><creatorcontrib>YANG HOUGUI</creatorcontrib><title>Copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing</title><description>The invention provides a copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing, and relates to a copper etching liquid composition. The cleaning agent is prepared from hydrogen peroxide, sulfuric acid, ethylenediamine tetramethylenephosphonic acid, acetoxime, glycollic acid, phosphoric acid, L-malic acid, 1, 2, 3, 4, 5-pentahydroxyhexanoic acid, polyvinyl alcohol and pure water. In the copper etching process, Cu < 2 + > in the copper etching liquid composition can react with O < 2-> to generate black CuO, when the solution reaches a saturated state, black precipitates can be generated, and meanwhile, after the copper etching liquid medicine is concentrated, crystals can be generated. The copper etching liquid composition disclosed by the invention has relatively strong chelating ability, and can reduce the content of Cu < 2 + > in a solution and reduce the generation of CuO; ethylenediamine tetramethylenephosphonic acid is used as a chelating a</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyzEOwjAMheEuDAi4QzgAUgtLGVEEYmJiryzXBUshMU6qCk5PA4iZ6Q3_96bFYIMIqaGEV_YX4_jec2sw3CREThy86YIapbbH3PHDMaiOfazg298Z9RETOMdPeD-hS6ONSVkk92wHiNnOi0kHLtLiu7Niedif7XFFEhqKAkieUmNPVVVX5bZel7vNP-YFJ0JHNw</recordid><startdate>20240531</startdate><enddate>20240531</enddate><creator>LIN RUIXIANG</creator><creator>ZHENG HELI</creator><creator>WU HANG</creator><creator>HE PEIHAO</creator><creator>ZHANG NIANCHUN</creator><creator>ZHANG MUSHEN</creator><creator>WU HONGXING</creator><creator>YANG HOUGUI</creator><scope>EVB</scope></search><sort><creationdate>20240531</creationdate><title>Copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing</title><author>LIN RUIXIANG ; ZHENG HELI ; WU HANG ; HE PEIHAO ; ZHANG NIANCHUN ; ZHANG MUSHEN ; WU HONGXING ; YANG HOUGUI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118109820A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><toplevel>online_resources</toplevel><creatorcontrib>LIN RUIXIANG</creatorcontrib><creatorcontrib>ZHENG HELI</creatorcontrib><creatorcontrib>WU HANG</creatorcontrib><creatorcontrib>HE PEIHAO</creatorcontrib><creatorcontrib>ZHANG NIANCHUN</creatorcontrib><creatorcontrib>ZHANG MUSHEN</creatorcontrib><creatorcontrib>WU HONGXING</creatorcontrib><creatorcontrib>YANG HOUGUI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIN RUIXIANG</au><au>ZHENG HELI</au><au>WU HANG</au><au>HE PEIHAO</au><au>ZHANG NIANCHUN</au><au>ZHANG MUSHEN</au><au>WU HONGXING</au><au>YANG HOUGUI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing</title><date>2024-05-31</date><risdate>2024</risdate><abstract>The invention provides a copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing, and relates to a copper etching liquid composition. The cleaning agent is prepared from hydrogen peroxide, sulfuric acid, ethylenediamine tetramethylenephosphonic acid, acetoxime, glycollic acid, phosphoric acid, L-malic acid, 1, 2, 3, 4, 5-pentahydroxyhexanoic acid, polyvinyl alcohol and pure water. In the copper etching process, Cu < 2 + > in the copper etching liquid composition can react with O < 2-> to generate black CuO, when the solution reaches a saturated state, black precipitates can be generated, and meanwhile, after the copper etching liquid medicine is concentrated, crystals can be generated. The copper etching liquid composition disclosed by the invention has relatively strong chelating ability, and can reduce the content of Cu < 2 + > in a solution and reduce the generation of CuO; ethylenediamine tetramethylenephosphonic acid is used as a chelating a</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE |
title | Copper etching liquid composition for reducing copper corrosion and etching crystallization after stripping and washing |
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