Latch-type sense amplifier for non-volatile memory

The invention relates to a latch type sense amplifier of a non-volatile memory. The latch type sense amplifier comprises three transistors, a latch element and two capacitors. Two drain/source terminals of the first transistor are connected to the first node and the second node, and a gate terminal of the first transistor receives a reference voltage. Two drain/source terminals of the second transistor are connected to the first node and the third node, and a gate terminal of the second transistor is connected to the data line. Two drain/source terminals of the third transistor are connected to a first power supply voltage and a first node, and a gate terminal of the third transistor receives an enable signal. The latch element is connected to the second node and the third node. A first capacitor is connected between a gate terminal of the third transistor and a gate terminal of the first transistor. A second capacitor is connected between a gate terminal of the third transistor and a gate terminal of the sec