Memory management method, memory storage device and memory control circuit unit

The invention provides a memory management method, a memory storage device and a memory control circuit unit. The method comprises the following steps: executing a first operation on a plurality of entity units to obtain quality evaluation parameters corresponding to the plurality of entity units; establishing an inspection list according to the quality evaluation parameters, the inspection list recording index information of first entity units in the plurality of entity units, and the number of the first entity units being less than the total number of the plurality of entity units; and in response to the condition that the preset condition is met, executing state scanning on the first entity unit according to the index information in the check list. Therefore, the maintenance efficiency of the rewritable nonvolatile memory module can be improved. 本发明提供一种存储器管理方法、存储器存储装置及存储器控制电路单元。所述方法包括：对多个实体单元执行第一操作，以获得对应于所述多个实体单元的品质评估参数；根据品质评估参数建立检查清单，其中检查清单记载所述多个实体单元中的第一实体单元的索引信息，且第一实体单元的数量少于所述多个实体单元的总数；以及响应于预设条件被满足，根据检查清