Composite film layer, photoetching method and system, LED chip and manufacturing method thereof
The invention provides a composite film layer, a photoetching method and system, an LED chip and a manufacturing method of the LED chip. According to the composite film layer, a patterned wavelength conversion part is arranged in a photoresist layer or on the surface of at least one side, and after...
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| creator | LI MINHUA CHEN KAIXUAN ZHAO BIN QU XIAODONG CUI HENGPING JIANG TUDUI YANG KEWEI TAN GUIYING |
| description | The invention provides a composite film layer, a photoetching method and system, an LED chip and a manufacturing method of the LED chip. According to the composite film layer, a patterned wavelength conversion part is arranged in a photoresist layer or on the surface of at least one side, and after the wavelength conversion part is irradiated by a first light source, the wavelength conversion part is irradiated by a second light source; the wavelength conversion part is excited to form the second light source with the wavelength shorter than that of the first light source to perform patterning exposure on the photoresist layer, so that not only can the use of a mask plate be avoided when the photoresist layer is exposed, but also the wavelength conversion part absorbs the first light source to excite the second light source with the wavelength shorter to expose the photoresist layer, and the photoetching precision can be improved. According to the photoetching method and system, the patterning of the photores |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118033979A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118033979A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118033979A3</originalsourceid><addsrcrecordid>eNqNirEKwjAUALs4iPoPz72CJYN2lFhxECf3ENIXE0jyQvI69O8VcXB0Ori7ZaMkxUzVM4L1IULQM5YWsiMmZON8ekJEdjSCTiPUuTLGFm7DGd4xf2TUabLa8FR-bnZYkOy6WVgdKm6-XDXby_CQ1x1mUlizNpiQlbx33XEvRH_oT-Kf5wVKizyb</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Composite film layer, photoetching method and system, LED chip and manufacturing method thereof</title><source>esp@cenet</source><creator>LI MINHUA ; CHEN KAIXUAN ; ZHAO BIN ; QU XIAODONG ; CUI HENGPING ; JIANG TUDUI ; YANG KEWEI ; TAN GUIYING</creator><creatorcontrib>LI MINHUA ; CHEN KAIXUAN ; ZHAO BIN ; QU XIAODONG ; CUI HENGPING ; JIANG TUDUI ; YANG KEWEI ; TAN GUIYING</creatorcontrib><description>The invention provides a composite film layer, a photoetching method and system, an LED chip and a manufacturing method of the LED chip. According to the composite film layer, a patterned wavelength conversion part is arranged in a photoresist layer or on the surface of at least one side, and after the wavelength conversion part is irradiated by a first light source, the wavelength conversion part is irradiated by a second light source; the wavelength conversion part is excited to form the second light source with the wavelength shorter than that of the first light source to perform patterning exposure on the photoresist layer, so that not only can the use of a mask plate be avoided when the photoresist layer is exposed, but also the wavelength conversion part absorbs the first light source to excite the second light source with the wavelength shorter to expose the photoresist layer, and the photoetching precision can be improved. According to the photoetching method and system, the patterning of the photores</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240514&DB=EPODOC&CC=CN&NR=118033979A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240514&DB=EPODOC&CC=CN&NR=118033979A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI MINHUA</creatorcontrib><creatorcontrib>CHEN KAIXUAN</creatorcontrib><creatorcontrib>ZHAO BIN</creatorcontrib><creatorcontrib>QU XIAODONG</creatorcontrib><creatorcontrib>CUI HENGPING</creatorcontrib><creatorcontrib>JIANG TUDUI</creatorcontrib><creatorcontrib>YANG KEWEI</creatorcontrib><creatorcontrib>TAN GUIYING</creatorcontrib><title>Composite film layer, photoetching method and system, LED chip and manufacturing method thereof</title><description>The invention provides a composite film layer, a photoetching method and system, an LED chip and a manufacturing method of the LED chip. According to the composite film layer, a patterned wavelength conversion part is arranged in a photoresist layer or on the surface of at least one side, and after the wavelength conversion part is irradiated by a first light source, the wavelength conversion part is irradiated by a second light source; the wavelength conversion part is excited to form the second light source with the wavelength shorter than that of the first light source to perform patterning exposure on the photoresist layer, so that not only can the use of a mask plate be avoided when the photoresist layer is exposed, but also the wavelength conversion part absorbs the first light source to excite the second light source with the wavelength shorter to expose the photoresist layer, and the photoetching precision can be improved. According to the photoetching method and system, the patterning of the photores</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNirEKwjAUALs4iPoPz72CJYN2lFhxECf3ENIXE0jyQvI69O8VcXB0Ori7ZaMkxUzVM4L1IULQM5YWsiMmZON8ekJEdjSCTiPUuTLGFm7DGd4xf2TUabLa8FR-bnZYkOy6WVgdKm6-XDXby_CQ1x1mUlizNpiQlbx33XEvRH_oT-Kf5wVKizyb</recordid><startdate>20240514</startdate><enddate>20240514</enddate><creator>LI MINHUA</creator><creator>CHEN KAIXUAN</creator><creator>ZHAO BIN</creator><creator>QU XIAODONG</creator><creator>CUI HENGPING</creator><creator>JIANG TUDUI</creator><creator>YANG KEWEI</creator><creator>TAN GUIYING</creator><scope>EVB</scope></search><sort><creationdate>20240514</creationdate><title>Composite film layer, photoetching method and system, LED chip and manufacturing method thereof</title><author>LI MINHUA ; CHEN KAIXUAN ; ZHAO BIN ; QU XIAODONG ; CUI HENGPING ; JIANG TUDUI ; YANG KEWEI ; TAN GUIYING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118033979A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>LI MINHUA</creatorcontrib><creatorcontrib>CHEN KAIXUAN</creatorcontrib><creatorcontrib>ZHAO BIN</creatorcontrib><creatorcontrib>QU XIAODONG</creatorcontrib><creatorcontrib>CUI HENGPING</creatorcontrib><creatorcontrib>JIANG TUDUI</creatorcontrib><creatorcontrib>YANG KEWEI</creatorcontrib><creatorcontrib>TAN GUIYING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI MINHUA</au><au>CHEN KAIXUAN</au><au>ZHAO BIN</au><au>QU XIAODONG</au><au>CUI HENGPING</au><au>JIANG TUDUI</au><au>YANG KEWEI</au><au>TAN GUIYING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Composite film layer, photoetching method and system, LED chip and manufacturing method thereof</title><date>2024-05-14</date><risdate>2024</risdate><abstract>The invention provides a composite film layer, a photoetching method and system, an LED chip and a manufacturing method of the LED chip. According to the composite film layer, a patterned wavelength conversion part is arranged in a photoresist layer or on the surface of at least one side, and after the wavelength conversion part is irradiated by a first light source, the wavelength conversion part is irradiated by a second light source; the wavelength conversion part is excited to form the second light source with the wavelength shorter than that of the first light source to perform patterning exposure on the photoresist layer, so that not only can the use of a mask plate be avoided when the photoresist layer is exposed, but also the wavelength conversion part absorbs the first light source to excite the second light source with the wavelength shorter to expose the photoresist layer, and the photoetching precision can be improved. According to the photoetching method and system, the patterning of the photores</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Composite film layer, photoetching method and system, LED chip and manufacturing method thereof |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T23%3A21%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LI%20MINHUA&rft.date=2024-05-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN118033979A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |