Simulation EEPROM and control method thereof, simulation controller and storage medium
The invention discloses a simulation EEPROM and a control method thereof, a simulation controller and a storage medium. The simulation controller is suitable for controlling the SRAM control unit to execute write operation after receiving the write operation request, monitoring whether Flash write-i...
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creator | WANG DUANXIU GUO LU JIN QIAO ZHOU YAO ZHOU MUCHUAN ZOU YANG YU LIMING |
description | The invention discloses a simulation EEPROM and a control method thereof, a simulation controller and a storage medium. The simulation controller is suitable for controlling the SRAM control unit to execute write operation after receiving the write operation request, monitoring whether Flash write-in indication information is changed or not, and controlling the Flash control unit to write data, which is not updated to the Flash storage unit, of the SRAM storage unit into the Flash storage unit after monitoring that the Flash write-in indication information indicates that the data is written into the Flash storage unit. And writing the data into the Flash storage unit. By adopting the scheme, the write operation efficiency of the EEPROM based on Flash and SRAM simulation can be improved.
一种模拟EEPROM及其控制方法、模拟控制器、存储介质。所述模拟控制器,适于在接收到所述写操作请求后,控制所述SRAM控制单元执行写操作,并监测Flash写入指示信息是否发生变化,并在监测到Flash写入指示信息指示向Flash存储单元中写入数据后,控制Flash控制单元将所述SRAM存储单元未更新至所述Flash存储单元的数据,写入至所述Flash存储单元中。采用上述方案,可以提高基于Flash和SRAM模拟EEPROM的写操作效率。 |
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一种模拟EEPROM及其控制方法、模拟控制器、存储介质。所述模拟控制器,适于在接收到所述写操作请求后,控制所述SRAM控制单元执行写操作,并监测Flash写入指示信息是否发生变化,并在监测到Flash写入指示信息指示向Flash存储单元中写入数据后,控制Flash控制单元将所述SRAM存储单元未更新至所述Flash存储单元的数据,写入至所述Flash存储单元中。采用上述方案,可以提高基于Flash和SRAM模拟EEPROM的写操作效率。</description><language>chi ; eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; PHYSICS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240510&DB=EPODOC&CC=CN&NR=118012355A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25553,76306</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240510&DB=EPODOC&CC=CN&NR=118012355A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WANG DUANXIU</creatorcontrib><creatorcontrib>GUO LU</creatorcontrib><creatorcontrib>JIN QIAO</creatorcontrib><creatorcontrib>ZHOU YAO</creatorcontrib><creatorcontrib>ZHOU MUCHUAN</creatorcontrib><creatorcontrib>ZOU YANG</creatorcontrib><creatorcontrib>YU LIMING</creatorcontrib><title>Simulation EEPROM and control method thereof, simulation controller and storage medium</title><description>The invention discloses a simulation EEPROM and a control method thereof, a simulation controller and a storage medium. The simulation controller is suitable for controlling the SRAM control unit to execute write operation after receiving the write operation request, monitoring whether Flash write-in indication information is changed or not, and controlling the Flash control unit to write data, which is not updated to the Flash storage unit, of the SRAM storage unit into the Flash storage unit after monitoring that the Flash write-in indication information indicates that the data is written into the Flash storage unit. And writing the data into the Flash storage unit. By adopting the scheme, the write operation efficiency of the EEPROM based on Flash and SRAM simulation can be improved.
一种模拟EEPROM及其控制方法、模拟控制器、存储介质。所述模拟控制器,适于在接收到所述写操作请求后,控制所述SRAM控制单元执行写操作,并监测Flash写入指示信息是否发生变化,并在监测到Flash写入指示信息指示向Flash存储单元中写入数据后,控制Flash控制单元将所述SRAM存储单元未更新至所述Flash存储单元的数据,写入至所述Flash存储单元中。采用上述方案,可以提高基于Flash和SRAM模拟EEPROM的写操作效率。</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgLzswtzUksyczPU3B1DQjy91VIzEtRSM7PKynKz1HITS3JyE9RKMlILUrNT9NRKEaohirJSS0C6yguyS9KTE8F6kjJLM3lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhhYGhkbGpqaOxsSoAQD1Pzle</recordid><startdate>20240510</startdate><enddate>20240510</enddate><creator>WANG DUANXIU</creator><creator>GUO LU</creator><creator>JIN QIAO</creator><creator>ZHOU YAO</creator><creator>ZHOU MUCHUAN</creator><creator>ZOU YANG</creator><creator>YU LIMING</creator><scope>EVB</scope></search><sort><creationdate>20240510</creationdate><title>Simulation EEPROM and control method thereof, simulation controller and storage medium</title><author>WANG DUANXIU ; GUO LU ; JIN QIAO ; ZHOU YAO ; ZHOU MUCHUAN ; ZOU YANG ; YU LIMING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118012355A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>WANG DUANXIU</creatorcontrib><creatorcontrib>GUO LU</creatorcontrib><creatorcontrib>JIN QIAO</creatorcontrib><creatorcontrib>ZHOU YAO</creatorcontrib><creatorcontrib>ZHOU MUCHUAN</creatorcontrib><creatorcontrib>ZOU YANG</creatorcontrib><creatorcontrib>YU LIMING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WANG DUANXIU</au><au>GUO LU</au><au>JIN QIAO</au><au>ZHOU YAO</au><au>ZHOU MUCHUAN</au><au>ZOU YANG</au><au>YU LIMING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Simulation EEPROM and control method thereof, simulation controller and storage medium</title><date>2024-05-10</date><risdate>2024</risdate><abstract>The invention discloses a simulation EEPROM and a control method thereof, a simulation controller and a storage medium. The simulation controller is suitable for controlling the SRAM control unit to execute write operation after receiving the write operation request, monitoring whether Flash write-in indication information is changed or not, and controlling the Flash control unit to write data, which is not updated to the Flash storage unit, of the SRAM storage unit into the Flash storage unit after monitoring that the Flash write-in indication information indicates that the data is written into the Flash storage unit. And writing the data into the Flash storage unit. By adopting the scheme, the write operation efficiency of the EEPROM based on Flash and SRAM simulation can be improved.
一种模拟EEPROM及其控制方法、模拟控制器、存储介质。所述模拟控制器,适于在接收到所述写操作请求后,控制所述SRAM控制单元执行写操作,并监测Flash写入指示信息是否发生变化,并在监测到Flash写入指示信息指示向Flash存储单元中写入数据后,控制Flash控制单元将所述SRAM存储单元未更新至所述Flash存储单元的数据,写入至所述Flash存储单元中。采用上述方案,可以提高基于Flash和SRAM模拟EEPROM的写操作效率。</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS |
title | Simulation EEPROM and control method thereof, simulation controller and storage medium |
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