Ion source, ion implantation device and ion implantation method

The invention relates to an ion source, an ion implantation device and an ion implantation method. The ion source comprises a shell, an electron gun, an electron receiving electrode, a selenium-containing solid source, a laser and an ion extraction electrode, the shell is provided with an ionization...

Ausführliche Beschreibung

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Hauptverfasser: CHEN ZIQIANG, LIAO YIMIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to an ion source, an ion implantation device and an ion implantation method. The ion source comprises a shell, an electron gun, an electron receiving electrode, a selenium-containing solid source, a laser and an ion extraction electrode, the shell is provided with an ionization chamber, and the electron gun and the electron receiving electrode are arranged in the ionization chamber and oppositely arranged in a spaced mode in the first direction. The selenium-containing solid source is arranged in the ionization chamber and provided with a first side wall, and the laser is arranged towards the first side wall of the selenium-containing solid source so as to heat the selenium-containing solid source into selenium-containing gas. The ion extraction electrode is arranged on the side wall of one side, in the second direction, of the shell in a penetrating mode and is provided with an ion outlet communicated with the ionization chamber. The electron gun comprises a cathode, and a first preset