Symmetrical double-sided MOS IC
The invention discloses a double-sided MOS IC (Metal Oxide Semiconductor Integrated Circuit). The double-sided MOS IC comprises an isolation layer; and an MOS transistor. The isolation layer separates the MOS IC into an MOS IC front surface and an MOS IC back surface. The MOS transistor is both on t...
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| creator | SEKAR VAITHILINGAM VEDULA RAVI PRAMOD KUMAR |
| description | The invention discloses a double-sided MOS IC (Metal Oxide Semiconductor Integrated Circuit). The double-sided MOS IC comprises an isolation layer; and an MOS transistor. The isolation layer separates the MOS IC into an MOS IC front surface and an MOS IC back surface. The MOS transistor is both on the front side of the MOS IC and on the back side of the MOS IC. The MOS transistor includes: a MOS gate; a first source connection in a first sub-section of the front side of the MOS IC; and a second source connection in a second sub-section of the back side of the MOS IC. The first source connection and the second source connection are electrically coupled together by a first front-to-back connection extending through the isolation layer. The MOS transistor further includes: a first drain connection in the first sub-section of the back side of the MOS IC; and a second drain connection in the second sub-section of the front side of the MOS IC. The first drain connection and the second drain connection are electrica |
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The isolation layer separates the MOS IC into an MOS IC front surface and an MOS IC back surface. The MOS transistor is both on the front side of the MOS IC and on the back side of the MOS IC. The MOS transistor includes: a MOS gate; a first source connection in a first sub-section of the front side of the MOS IC; and a second source connection in a second sub-section of the back side of the MOS IC. The first source connection and the second source connection are electrically coupled together by a first front-to-back connection extending through the isolation layer. The MOS transistor further includes: a first drain connection in the first sub-section of the back side of the MOS IC; and a second drain connection in the second sub-section of the front side of the MOS IC. The first drain connection and the second drain connection are electrica</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240503&DB=EPODOC&CC=CN&NR=117981075A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240503&DB=EPODOC&CC=CN&NR=117981075A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEKAR VAITHILINGAM</creatorcontrib><creatorcontrib>VEDULA RAVI PRAMOD KUMAR</creatorcontrib><title>Symmetrical double-sided MOS IC</title><description>The invention discloses a double-sided MOS IC (Metal Oxide Semiconductor Integrated Circuit). The double-sided MOS IC comprises an isolation layer; and an MOS transistor. The isolation layer separates the MOS IC into an MOS IC front surface and an MOS IC back surface. The MOS transistor is both on the front side of the MOS IC and on the back side of the MOS IC. The MOS transistor includes: a MOS gate; a first source connection in a first sub-section of the front side of the MOS IC; and a second source connection in a second sub-section of the back side of the MOS IC. The first source connection and the second source connection are electrically coupled together by a first front-to-back connection extending through the isolation layer. The MOS transistor further includes: a first drain connection in the first sub-section of the back side of the MOS IC; and a second drain connection in the second sub-section of the front side of the MOS IC. 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| title | Symmetrical double-sided MOS IC |
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