Device containing semiconductor field plate and preparation method thereof
The invention discloses a device containing a semiconductor field plate, which comprises a drain electrode, a source electrode, a gate electrode and a field plate, two ends of the field plate are respectively connected with the source electrode and the drain electrode or the gate electrode and the d...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LIANG HUINAN REN YONGSHUO WANG RONGHUA |
| description | The invention discloses a device containing a semiconductor field plate, which comprises a drain electrode, a source electrode, a gate electrode and a field plate, two ends of the field plate are respectively connected with the source electrode and the drain electrode or the gate electrode and the drain electrode, and the field plate is made of a semiconductor material. The device containing the semiconductor field plate comprises the field plate made of the semiconductor material, one end of the field plate is connected with the drain electrode, and the other end of the field plate is connected with the gate electrode or the source electrode, so that uniform gradient potential is formed on the field plate when the field plate is turned off; the potential difference between the field plate and two-dimensional electron gas below the field plate is effectively controlled, electric field distribution is effectively improved, the problems of breakdown reliability failure of the dielectric layer caused by a high e |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN117976701A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN117976701A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN117976701A3</originalsourceid><addsrcrecordid>eNqNijEKAjEUBdNYiHqH7wEEg2CwXFZFLKzsl0_y4gaySUi-nt8tPIDVzMAs1f2MT7Agm5NwSCG9qGEKc7q3lVzJB0RHJbKAOM1WUbiyhJxogozZkYyoyH6tFp5jw-bHldpeL8_-tkPJA1phiwQZ-ofW5mSOZq-7wz_PF127NZg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Device containing semiconductor field plate and preparation method thereof</title><source>esp@cenet</source><creator>LIANG HUINAN ; REN YONGSHUO ; WANG RONGHUA</creator><creatorcontrib>LIANG HUINAN ; REN YONGSHUO ; WANG RONGHUA</creatorcontrib><description>The invention discloses a device containing a semiconductor field plate, which comprises a drain electrode, a source electrode, a gate electrode and a field plate, two ends of the field plate are respectively connected with the source electrode and the drain electrode or the gate electrode and the drain electrode, and the field plate is made of a semiconductor material. The device containing the semiconductor field plate comprises the field plate made of the semiconductor material, one end of the field plate is connected with the drain electrode, and the other end of the field plate is connected with the gate electrode or the source electrode, so that uniform gradient potential is formed on the field plate when the field plate is turned off; the potential difference between the field plate and two-dimensional electron gas below the field plate is effectively controlled, electric field distribution is effectively improved, the problems of breakdown reliability failure of the dielectric layer caused by a high e</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240503&DB=EPODOC&CC=CN&NR=117976701A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240503&DB=EPODOC&CC=CN&NR=117976701A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIANG HUINAN</creatorcontrib><creatorcontrib>REN YONGSHUO</creatorcontrib><creatorcontrib>WANG RONGHUA</creatorcontrib><title>Device containing semiconductor field plate and preparation method thereof</title><description>The invention discloses a device containing a semiconductor field plate, which comprises a drain electrode, a source electrode, a gate electrode and a field plate, two ends of the field plate are respectively connected with the source electrode and the drain electrode or the gate electrode and the drain electrode, and the field plate is made of a semiconductor material. The device containing the semiconductor field plate comprises the field plate made of the semiconductor material, one end of the field plate is connected with the drain electrode, and the other end of the field plate is connected with the gate electrode or the source electrode, so that uniform gradient potential is formed on the field plate when the field plate is turned off; the potential difference between the field plate and two-dimensional electron gas below the field plate is effectively controlled, electric field distribution is effectively improved, the problems of breakdown reliability failure of the dielectric layer caused by a high e</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNijEKAjEUBdNYiHqH7wEEg2CwXFZFLKzsl0_y4gaySUi-nt8tPIDVzMAs1f2MT7Agm5NwSCG9qGEKc7q3lVzJB0RHJbKAOM1WUbiyhJxogozZkYyoyH6tFp5jw-bHldpeL8_-tkPJA1phiwQZ-ofW5mSOZq-7wz_PF127NZg</recordid><startdate>20240503</startdate><enddate>20240503</enddate><creator>LIANG HUINAN</creator><creator>REN YONGSHUO</creator><creator>WANG RONGHUA</creator><scope>EVB</scope></search><sort><creationdate>20240503</creationdate><title>Device containing semiconductor field plate and preparation method thereof</title><author>LIANG HUINAN ; REN YONGSHUO ; WANG RONGHUA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117976701A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIANG HUINAN</creatorcontrib><creatorcontrib>REN YONGSHUO</creatorcontrib><creatorcontrib>WANG RONGHUA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIANG HUINAN</au><au>REN YONGSHUO</au><au>WANG RONGHUA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Device containing semiconductor field plate and preparation method thereof</title><date>2024-05-03</date><risdate>2024</risdate><abstract>The invention discloses a device containing a semiconductor field plate, which comprises a drain electrode, a source electrode, a gate electrode and a field plate, two ends of the field plate are respectively connected with the source electrode and the drain electrode or the gate electrode and the drain electrode, and the field plate is made of a semiconductor material. The device containing the semiconductor field plate comprises the field plate made of the semiconductor material, one end of the field plate is connected with the drain electrode, and the other end of the field plate is connected with the gate electrode or the source electrode, so that uniform gradient potential is formed on the field plate when the field plate is turned off; the potential difference between the field plate and two-dimensional electron gas below the field plate is effectively controlled, electric field distribution is effectively improved, the problems of breakdown reliability failure of the dielectric layer caused by a high e</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN117976701A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Device containing semiconductor field plate and preparation method thereof |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T15%3A24%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LIANG%20HUINAN&rft.date=2024-05-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN117976701A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |