Bonding structure, wafer bonding method and wafer stacking structure
The invention provides a bonding structure, a wafer bonding method and a wafer stacking structure. The bonding structure comprises a retaining wall structure arranged between adjacent metal rings, and the retaining wall structure comprises first metal blocking walls and second metal blocking walls w...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | XU XIRUI LIU JINLEI PENG KUN |
| description | The invention provides a bonding structure, a wafer bonding method and a wafer stacking structure. The bonding structure comprises a retaining wall structure arranged between adjacent metal rings, and the retaining wall structure comprises first metal blocking walls and second metal blocking walls which are alternately arranged at intervals, so that chemical liquid permeation can be laterally blocked by utilizing the first metal blocking walls and the second metal blocking walls which are alternately arranged. And meanwhile, the first metal barrier wall does not extend to the second metal ring and a gap is reserved, and the second metal barrier wall does not extend to the first metal ring and a gap is reserved, so that the metal layer on the substrate is prevented from being connected in a large area, and charge aggregation and abnormality caused by charge aggregation are reduced.
本发明提供了一种键合结构、晶圆的键合方法及晶圆堆叠结构。该键合结构包括设置在相邻的金属环之间的挡墙结构，该挡墙结构包括交替且间隔排布的第一金属阻挡墙和第二金属阻挡墙，从而可利用交替布置的第一金属阻挡墙和第二金属阻挡墙侧向阻挡化学液渗入。同时，第一金属阻挡墙未延 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN117976636A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN117976636A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN117976636A3</originalsourceid><addsrcrecordid>eNrjZHBxys9LycxLVyguKSpNLiktStVRKE9MSy1SSIJK5KaWZOSnKCTmpUAliksSk7NRtPAwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0NDc0tzMzNjM0djYtQAAM-aMyk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Bonding structure, wafer bonding method and wafer stacking structure</title><source>esp@cenet</source><creator>XU XIRUI ; LIU JINLEI ; PENG KUN</creator><creatorcontrib>XU XIRUI ; LIU JINLEI ; PENG KUN</creatorcontrib><description>The invention provides a bonding structure, a wafer bonding method and a wafer stacking structure. The bonding structure comprises a retaining wall structure arranged between adjacent metal rings, and the retaining wall structure comprises first metal blocking walls and second metal blocking walls which are alternately arranged at intervals, so that chemical liquid permeation can be laterally blocked by utilizing the first metal blocking walls and the second metal blocking walls which are alternately arranged. And meanwhile, the first metal barrier wall does not extend to the second metal ring and a gap is reserved, and the second metal barrier wall does not extend to the first metal ring and a gap is reserved, so that the metal layer on the substrate is prevented from being connected in a large area, and charge aggregation and abnormality caused by charge aggregation are reduced.
本发明提供了一种键合结构、晶圆的键合方法及晶圆堆叠结构。该键合结构包括设置在相邻的金属环之间的挡墙结构，该挡墙结构包括交替且间隔排布的第一金属阻挡墙和第二金属阻挡墙，从而可利用交替布置的第一金属阻挡墙和第二金属阻挡墙侧向阻挡化学液渗入。同时，第一金属阻挡墙未延</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; RESONATORS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240503&DB=EPODOC&CC=CN&NR=117976636A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240503&DB=EPODOC&CC=CN&NR=117976636A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XU XIRUI</creatorcontrib><creatorcontrib>LIU JINLEI</creatorcontrib><creatorcontrib>PENG KUN</creatorcontrib><title>Bonding structure, wafer bonding method and wafer stacking structure</title><description>The invention provides a bonding structure, a wafer bonding method and a wafer stacking structure. The bonding structure comprises a retaining wall structure arranged between adjacent metal rings, and the retaining wall structure comprises first metal blocking walls and second metal blocking walls which are alternately arranged at intervals, so that chemical liquid permeation can be laterally blocked by utilizing the first metal blocking walls and the second metal blocking walls which are alternately arranged. And meanwhile, the first metal barrier wall does not extend to the second metal ring and a gap is reserved, and the second metal barrier wall does not extend to the first metal ring and a gap is reserved, so that the metal layer on the substrate is prevented from being connected in a large area, and charge aggregation and abnormality caused by charge aggregation are reduced.
本发明提供了一种键合结构、晶圆的键合方法及晶圆堆叠结构。该键合结构包括设置在相邻的金属环之间的挡墙结构，该挡墙结构包括交替且间隔排布的第一金属阻挡墙和第二金属阻挡墙，从而可利用交替布置的第一金属阻挡墙和第二金属阻挡墙侧向阻挡化学液渗入。同时，第一金属阻挡墙未延</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>RESONATORS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBxys9LycxLVyguKSpNLiktStVRKE9MSy1SSIJK5KaWZOSnKCTmpUAliksSk7NRtPAwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0NDc0tzMzNjM0djYtQAAM-aMyk</recordid><startdate>20240503</startdate><enddate>20240503</enddate><creator>XU XIRUI</creator><creator>LIU JINLEI</creator><creator>PENG KUN</creator><scope>EVB</scope></search><sort><creationdate>20240503</creationdate><title>Bonding structure, wafer bonding method and wafer stacking structure</title><author>XU XIRUI ; LIU JINLEI ; PENG KUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117976636A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>RESONATORS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>XU XIRUI</creatorcontrib><creatorcontrib>LIU JINLEI</creatorcontrib><creatorcontrib>PENG KUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XU XIRUI</au><au>LIU JINLEI</au><au>PENG KUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Bonding structure, wafer bonding method and wafer stacking structure</title><date>2024-05-03</date><risdate>2024</risdate><abstract>The invention provides a bonding structure, a wafer bonding method and a wafer stacking structure. The bonding structure comprises a retaining wall structure arranged between adjacent metal rings, and the retaining wall structure comprises first metal blocking walls and second metal blocking walls which are alternately arranged at intervals, so that chemical liquid permeation can be laterally blocked by utilizing the first metal blocking walls and the second metal blocking walls which are alternately arranged. And meanwhile, the first metal barrier wall does not extend to the second metal ring and a gap is reserved, and the second metal barrier wall does not extend to the first metal ring and a gap is reserved, so that the metal layer on the substrate is prevented from being connected in a large area, and charge aggregation and abnormality caused by charge aggregation are reduced.
本发明提供了一种键合结构、晶圆的键合方法及晶圆堆叠结构。该键合结构包括设置在相邻的金属环之间的挡墙结构，该挡墙结构包括交替且间隔排布的第一金属阻挡墙和第二金属阻挡墙，从而可利用交替布置的第一金属阻挡墙和第二金属阻挡墙侧向阻挡化学液渗入。同时，第一金属阻挡墙未延</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN117976636A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS RESONATORS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Bonding structure, wafer bonding method and wafer stacking structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T22%3A20%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=XU%20XIRUI&rft.date=2024-05-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN117976636A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |