Gallium nitride-based semiconductor laser

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and the lower limiting layer comprises a first sub lower lim...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HU ZHIYONG, ZHENG JINJIAN, MENG LEI, ZHANG HUIKANG, CHEN SANXI, LI XIAOQIN, ZHANG YU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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