Method for filling blind hole of silicon adapter plate through ultrasonic-assisted electroplating

The invention discloses a method for filling a blind hole of a silicon adapter plate through ultrasonic-assisted electroplating, and belongs to the field of micro-nano manufacturing processes. The method comprises the following steps: in a blind hole (the depth-to-width ratio is (5: 1)-(16: 1) with an insulating layer, depositing a nickel film with the thickness of 100-300nm as a barrier layer through a sputtering process, and depositing a copper film with the thickness of 80-300nm as a seed layer through an evaporation process; and then, the wafer is placed in a wafer support (Figure 1 (6)) in an electroplating bath (Figure 1 (8)), the current density of 0.5-1.2 A/dm < 2 > is kept, and an intermittent ultrasonic device (Figure 1 (9)) is started for electroplating. Through sputtering and evaporation processes and intermittent ultrasonic treatment, compact blind hole filling with high aspect ratio and few defects is achieved, and the method has wide application prospects in the fields of 3D packaging, on-chip