High-voltage flip light-emitting diode chip and light-emitting device
The invention provides a high-voltage flip light-emitting diode chip, which comprises a substrate, an epitaxial layer, a contact electrode, an insulating reflecting layer, a first protective layer and a bonding pad layer, the insulating reflecting layer comprises a first insulating layer, a second i...
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| creator | HONG LINGYUAN WANG ZICHAO ZHANG ZHONGYING GONG MINGCHUAN WANG QING HE MINYOU CHEN DAZHONG |
| description | The invention provides a high-voltage flip light-emitting diode chip, which comprises a substrate, an epitaxial layer, a contact electrode, an insulating reflecting layer, a first protective layer and a bonding pad layer, the insulating reflecting layer comprises a first insulating layer, a second insulating layer and a first reflecting layer which are stacked in sequence, and the first protective layer covers at least part of the upper surface of the first reflecting layer. The first protection layer is a compact layer, so that the first protection layer can effectively prevent moisture from diffusing in the chip structure, the moisture resistance of the chip is improved, and the problem that the appearance of the chip is aged and abnormal in a high-temperature and high-humidity environment is avoided; the invention further provides a light-emitting device which comprises the high-voltage flip-chip light-emitting diode chip.
本申请提供一种高压倒装发光二极管芯片，包括衬底、外延层、接触电极、绝缘反射层、第一保护层和焊盘层，绝缘反射层包括依次堆叠的第一绝缘层、第二绝缘层、第一反射层，第一保护层 |
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本申请提供一种高压倒装发光二极管芯片，包括衬底、外延层、接触电极、绝缘反射层、第一保护层和焊盘层，绝缘反射层包括依次堆叠的第一绝缘层、第二绝缘层、第一反射层，第一保护层</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240412&DB=EPODOC&CC=CN&NR=117878223A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240412&DB=EPODOC&CC=CN&NR=117878223A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HONG LINGYUAN</creatorcontrib><creatorcontrib>WANG ZICHAO</creatorcontrib><creatorcontrib>ZHANG ZHONGYING</creatorcontrib><creatorcontrib>GONG MINGCHUAN</creatorcontrib><creatorcontrib>WANG QING</creatorcontrib><creatorcontrib>HE MINYOU</creatorcontrib><creatorcontrib>CHEN DAZHONG</creatorcontrib><title>High-voltage flip light-emitting diode chip and light-emitting device</title><description>The invention provides a high-voltage flip light-emitting diode chip, which comprises a substrate, an epitaxial layer, a contact electrode, an insulating reflecting layer, a first protective layer and a bonding pad layer, the insulating reflecting layer comprises a first insulating layer, a second insulating layer and a first reflecting layer which are stacked in sequence, and the first protective layer covers at least part of the upper surface of the first reflecting layer. The first protection layer is a compact layer, so that the first protection layer can effectively prevent moisture from diffusing in the chip structure, the moisture resistance of the chip is improved, and the problem that the appearance of the chip is aged and abnormal in a high-temperature and high-humidity environment is avoided; the invention further provides a light-emitting device which comprises the high-voltage flip-chip light-emitting diode chip.
本申请提供一种高压倒装发光二极管芯片，包括衬底、外延层、接触电极、绝缘反射层、第一保护层和焊盘层，绝缘反射层包括依次堆叠的第一绝缘层、第二绝缘层、第一反射层，第一保护层</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD1yEzP0C3LzylJTE9VSMvJLFDIAYqU6KbmZpaUZOalK6Rk5qekKiRnAGUS81IwZFPLMpNTeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoaG5hbmFkZGxozExagDR8TL8</recordid><startdate>20240412</startdate><enddate>20240412</enddate><creator>HONG LINGYUAN</creator><creator>WANG ZICHAO</creator><creator>ZHANG ZHONGYING</creator><creator>GONG MINGCHUAN</creator><creator>WANG QING</creator><creator>HE MINYOU</creator><creator>CHEN DAZHONG</creator><scope>EVB</scope></search><sort><creationdate>20240412</creationdate><title>High-voltage flip light-emitting diode chip and light-emitting device</title><author>HONG LINGYUAN ; WANG ZICHAO ; ZHANG ZHONGYING ; GONG MINGCHUAN ; WANG QING ; HE MINYOU ; CHEN DAZHONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117878223A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HONG LINGYUAN</creatorcontrib><creatorcontrib>WANG ZICHAO</creatorcontrib><creatorcontrib>ZHANG ZHONGYING</creatorcontrib><creatorcontrib>GONG MINGCHUAN</creatorcontrib><creatorcontrib>WANG QING</creatorcontrib><creatorcontrib>HE MINYOU</creatorcontrib><creatorcontrib>CHEN DAZHONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HONG LINGYUAN</au><au>WANG ZICHAO</au><au>ZHANG ZHONGYING</au><au>GONG MINGCHUAN</au><au>WANG QING</au><au>HE MINYOU</au><au>CHEN DAZHONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High-voltage flip light-emitting diode chip and light-emitting device</title><date>2024-04-12</date><risdate>2024</risdate><abstract>The invention provides a high-voltage flip light-emitting diode chip, which comprises a substrate, an epitaxial layer, a contact electrode, an insulating reflecting layer, a first protective layer and a bonding pad layer, the insulating reflecting layer comprises a first insulating layer, a second insulating layer and a first reflecting layer which are stacked in sequence, and the first protective layer covers at least part of the upper surface of the first reflecting layer. The first protection layer is a compact layer, so that the first protection layer can effectively prevent moisture from diffusing in the chip structure, the moisture resistance of the chip is improved, and the problem that the appearance of the chip is aged and abnormal in a high-temperature and high-humidity environment is avoided; the invention further provides a light-emitting device which comprises the high-voltage flip-chip light-emitting diode chip.
本申请提供一种高压倒装发光二极管芯片，包括衬底、外延层、接触电极、绝缘反射层、第一保护层和焊盘层，绝缘反射层包括依次堆叠的第一绝缘层、第二绝缘层、第一反射层，第一保护层</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | High-voltage flip light-emitting diode chip and light-emitting device |
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