In-memory computing circuit for nonvolatile random access memory

The invention provides an in-memory calculation circuit for a nonvolatile random access memory, and belongs to the technical field of integrated circuits, the in-memory calculation circuit comprises a register accumulation module, a voltage following reading module and an input sparse sensing module...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHANG YUE, ZHAO WEISHENG, ZHANG BOJUN, GU ZHENGKUN, WANG ZEKUN, CHEN YOUXIANG, WANG JINKAI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides an in-memory calculation circuit for a nonvolatile random access memory, and belongs to the technical field of integrated circuits, the in-memory calculation circuit comprises a register accumulation module, a voltage following reading module and an input sparse sensing module, the input sparse sensing module is used for detecting whether input data of each storage unit group is 0 or not, and if yes, the input sparse sensing module is used for detecting whether the input data of each storage unit group is 0 or not; skipping the input data which is 0; the voltage following reading module is used for reading the calculation weight of each storage unit group on each column of storage unit array; and the register accumulation module is used for determining multiplication results of the storage unit groups of which the input data is not 0 on each column of storage unit array according to the calculation weight and performing accumulation calculation to obtain in-memory calculation results of