Multi-channel multi-electrode heterostructure field effect transistor

The invention provides a multi-channel multi-electrode heterostructure field effect transistor. The multi-channel multi-electrode heterostructure field effect transistor comprises a heat conduction substrate, a nucleating layer, a buffer layer, a superlattice stack, a field effect transistor and a c...

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1. Verfasser:	CHU HONGSHEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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