Multi-channel multi-electrode heterostructure field effect transistor

The invention provides a multi-channel multi-electrode heterostructure field effect transistor. The multi-channel multi-electrode heterostructure field effect transistor comprises a heat conduction substrate, a nucleating layer, a buffer layer, a superlattice stack, a field effect transistor and a covering layer, the heat conduction substrate is a semiconductor wafer embedded with a plurality of through holes, the through holes are filled with heat conduction materials, the nucleating layer is arranged on the heat conduction substrate, the buffer layer is arranged on the nucleating layer, the superlattice stacking body is arranged on the buffer layer, the field effect transistor is electrically connected to the superlattice stacking body, and the field effect transistor is electrically connected to the superlattice stacking body. The capping layer is disposed on the superlattice stack. 本发明提供了一种多通道多电极异质结构场效应晶体管，其包括导热基板、成核层、缓冲层、超晶格堆叠体、场效应晶体管和覆盖层。该导热基板为内嵌有多个通孔的半导体晶圆，该多个通孔填充有导热材料，该成核层设置在该导热基板上，该缓冲层设置在该成核层，该超晶格堆叠体