Copper etching solution
The invention belongs to the technical field of etching solutions, and particularly relates to a copper etching solution. The composition of the copper etching liquid comprises the following raw materials in percentage by weight: 10-28% of hydrogen peroxide, 0.05-0.3% of a hydrogen peroxide stabiliz...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HE YEQIAN WANG WEIKANG ZHANG JIAMING HUANG DEXIN |
| description | The invention belongs to the technical field of etching solutions, and particularly relates to a copper etching solution. The composition of the copper etching liquid comprises the following raw materials in percentage by weight: 10-28% of hydrogen peroxide, 0.05-0.3% of a hydrogen peroxide stabilizer, 0.15-0.4% of a corrosion inhibitor, 1-4% of a chelating agent, 0.3-1% of a pH regulator, 0.6-3% of organic alcohol, 0.15-0.75% of organic alkali and the balance of water. The organic alcohol and the organic alkali are added into the copper etching solution according to a certain proportion, and the types of the organic alcohol and the organic alkali are optimized, so that the complexation of certain components in the formula and copper ions is promoted, the stability of a complex is improved, the effects of all the components in the etching solution are stabilized, and the stability and the safety of the etching solution are improved.
本发明属于蚀刻液技术领域，具体涉及一种铜蚀刻液。该铜蚀刻液的组合物包括如下重量百分比的原料：双氧水10-28％、双氧水稳定剂0.05-0.3％、缓蚀剂0. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN117779036A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN117779036A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN117779036A3</originalsourceid><addsrcrecordid>eNrjZBB3zi8oSC1SSC1JzsjMS1cozs8pLcnMz-NhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaG5ubmlgbGZo7GxKgBANfOIhg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Copper etching solution</title><source>esp@cenet</source><creator>HE YEQIAN ; WANG WEIKANG ; ZHANG JIAMING ; HUANG DEXIN</creator><creatorcontrib>HE YEQIAN ; WANG WEIKANG ; ZHANG JIAMING ; HUANG DEXIN</creatorcontrib><description>The invention belongs to the technical field of etching solutions, and particularly relates to a copper etching solution. The composition of the copper etching liquid comprises the following raw materials in percentage by weight: 10-28% of hydrogen peroxide, 0.05-0.3% of a hydrogen peroxide stabilizer, 0.15-0.4% of a corrosion inhibitor, 1-4% of a chelating agent, 0.3-1% of a pH regulator, 0.6-3% of organic alcohol, 0.15-0.75% of organic alkali and the balance of water. The organic alcohol and the organic alkali are added into the copper etching solution according to a certain proportion, and the types of the organic alcohol and the organic alkali are optimized, so that the complexation of certain components in the formula and copper ions is promoted, the stability of a complex is improved, the effects of all the components in the etching solution are stabilized, and the stability and the safety of the etching solution are improved.
本发明属于蚀刻液技术领域，具体涉及一种铜蚀刻液。该铜蚀刻液的组合物包括如下重量百分比的原料：双氧水10-28％、双氧水稳定剂0.05-0.3％、缓蚀剂0.</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240329&DB=EPODOC&CC=CN&NR=117779036A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240329&DB=EPODOC&CC=CN&NR=117779036A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HE YEQIAN</creatorcontrib><creatorcontrib>WANG WEIKANG</creatorcontrib><creatorcontrib>ZHANG JIAMING</creatorcontrib><creatorcontrib>HUANG DEXIN</creatorcontrib><title>Copper etching solution</title><description>The invention belongs to the technical field of etching solutions, and particularly relates to a copper etching solution. The composition of the copper etching liquid comprises the following raw materials in percentage by weight: 10-28% of hydrogen peroxide, 0.05-0.3% of a hydrogen peroxide stabilizer, 0.15-0.4% of a corrosion inhibitor, 1-4% of a chelating agent, 0.3-1% of a pH regulator, 0.6-3% of organic alcohol, 0.15-0.75% of organic alkali and the balance of water. The organic alcohol and the organic alkali are added into the copper etching solution according to a certain proportion, and the types of the organic alcohol and the organic alkali are optimized, so that the complexation of certain components in the formula and copper ions is promoted, the stability of a complex is improved, the effects of all the components in the etching solution are stabilized, and the stability and the safety of the etching solution are improved.
本发明属于蚀刻液技术领域，具体涉及一种铜蚀刻液。该铜蚀刻液的组合物包括如下重量百分比的原料：双氧水10-28％、双氧水稳定剂0.05-0.3％、缓蚀剂0.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB3zi8oSC1SSC1JzsjMS1cozs8pLcnMz-NhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaG5ubmlgbGZo7GxKgBANfOIhg</recordid><startdate>20240329</startdate><enddate>20240329</enddate><creator>HE YEQIAN</creator><creator>WANG WEIKANG</creator><creator>ZHANG JIAMING</creator><creator>HUANG DEXIN</creator><scope>EVB</scope></search><sort><creationdate>20240329</creationdate><title>Copper etching solution</title><author>HE YEQIAN ; WANG WEIKANG ; ZHANG JIAMING ; HUANG DEXIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117779036A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><toplevel>online_resources</toplevel><creatorcontrib>HE YEQIAN</creatorcontrib><creatorcontrib>WANG WEIKANG</creatorcontrib><creatorcontrib>ZHANG JIAMING</creatorcontrib><creatorcontrib>HUANG DEXIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HE YEQIAN</au><au>WANG WEIKANG</au><au>ZHANG JIAMING</au><au>HUANG DEXIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Copper etching solution</title><date>2024-03-29</date><risdate>2024</risdate><abstract>The invention belongs to the technical field of etching solutions, and particularly relates to a copper etching solution. The composition of the copper etching liquid comprises the following raw materials in percentage by weight: 10-28% of hydrogen peroxide, 0.05-0.3% of a hydrogen peroxide stabilizer, 0.15-0.4% of a corrosion inhibitor, 1-4% of a chelating agent, 0.3-1% of a pH regulator, 0.6-3% of organic alcohol, 0.15-0.75% of organic alkali and the balance of water. The organic alcohol and the organic alkali are added into the copper etching solution according to a certain proportion, and the types of the organic alcohol and the organic alkali are optimized, so that the complexation of certain components in the formula and copper ions is promoted, the stability of a complex is improved, the effects of all the components in the etching solution are stabilized, and the stability and the safety of the etching solution are improved.
本发明属于蚀刻液技术领域，具体涉及一种铜蚀刻液。该铜蚀刻液的组合物包括如下重量百分比的原料：双氧水10-28％、双氧水稳定剂0.05-0.3％、缓蚀剂0.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN117779036A |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE |
| title | Copper etching solution |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T15%3A39%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HE%20YEQIAN&rft.date=2024-03-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN117779036A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |