Fast recovery diode and manufacturing method thereof
The invention relates to a fast recovery diode and a manufacturing method thereof. The fast recovery diode comprises a substrate, a first epitaxial layer, a second epitaxial layer and a second doping part. The first epitaxial layer is arranged on one side of the substrate, and the first epitaxial la...
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| creator | XIONG ZHIJUN |
| description | The invention relates to a fast recovery diode and a manufacturing method thereof. The fast recovery diode comprises a substrate, a first epitaxial layer, a second epitaxial layer and a second doping part. The first epitaxial layer is arranged on one side of the substrate, and the first epitaxial layer is of a first conduction type. The second epitaxial layer is arranged on one side, back to the substrate, of the first epitaxial layer, the second epitaxial layer is of a first conductive type, a doping layer and a plurality of first doping parts are arranged in the second epitaxial layer, the first doping parts and the doping layer are of a second conductive type, the first doping parts are located at one end, close to the first epitaxial layer, of the second epitaxial layer, and the second doping parts are located at the other end, close to the second epitaxial layer, of the second epitaxial layer. The doped layer is located at one end of the second epitaxial layer away from the first epitaxial layer. The sec |
| format | Patent |
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The first epitaxial layer is arranged on one side of the substrate, and the first epitaxial layer is of a first conduction type. The second epitaxial layer is arranged on one side, back to the substrate, of the first epitaxial layer, the second epitaxial layer is of a first conductive type, a doping layer and a plurality of first doping parts are arranged in the second epitaxial layer, the first doping parts and the doping layer are of a second conductive type, the first doping parts are located at one end, close to the first epitaxial layer, of the second epitaxial layer, and the second doping parts are located at the other end, close to the second epitaxial layer, of the second epitaxial layer. The doped layer is located at one end of the second epitaxial layer away from the first epitaxial layer. 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The fast recovery diode comprises a substrate, a first epitaxial layer, a second epitaxial layer and a second doping part. The first epitaxial layer is arranged on one side of the substrate, and the first epitaxial layer is of a first conduction type. The second epitaxial layer is arranged on one side, back to the substrate, of the first epitaxial layer, the second epitaxial layer is of a first conductive type, a doping layer and a plurality of first doping parts are arranged in the second epitaxial layer, the first doping parts and the doping layer are of a second conductive type, the first doping parts are located at one end, close to the first epitaxial layer, of the second epitaxial layer, and the second doping parts are located at the other end, close to the second epitaxial layer, of the second epitaxial layer. The doped layer is located at one end of the second epitaxial layer away from the first epitaxial layer. The sec</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Fast recovery diode and manufacturing method thereof |
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