Composite silicon carbide MOSFET cellular structure and device

The invention discloses a compound silicon carbide MOSFET cellular structure and device, which integrates a planar gate and a trench gate into one MOSFET to generate a double-channel structure, optimize a current path, effectively prevent current crowding, effectively improve current density and red...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JIANG LIDA, LIU HAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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