Semiconductor manufacturing method and semiconductor structure

The invention relates to a semiconductor manufacturing method and a semiconductor structure, and the method comprises the following steps: providing a semiconductor substrate; forming a mask layer on the semiconductor substrate; patterning the mask layer to form a substrate exposed region on the semiconductor substrate, wherein the patterned mask layer forms a mask side wall at the boundary of the substrate exposed region; forming a protective layer, wherein the protective layer at least fills the exposed region of the substrate; patterning the protective layer at a position corresponding to the exposed area of the substrate and forming a protective side wall covering the side wall of the mask on the side surface; patterning the semiconductor substrate to form a groove extending from the substrate exposed area to the interior of the semiconductor substrate; the trench is filled by epitaxial growth. According to the semiconductor manufacturing method, filling of the high-aspect-ratio groove can be achieved, an