Photodiode and manufacturing method thereof, and electronic component

The invention relates to a photodiode, a manufacturing method thereof and an electronic component. The method comprises: forming a photo-generated minority carrier collection region stacked on a first medium portion, the first medium portion having a first conductive type, the photo-generated minority carrier collection region having a second conductive type, and the photo-generated minority carrier collection region having at least one mesh region; and forming a pinning layer covering the photo-generated minority carrier collection region, wherein the pinning layer has the first conductivity type. According to the method, the photodiode with balanced dark current and light quantum efficiency and good overall performance can be manufactured. 本申请涉及光电二极管及其制造方法、电子元件。该方法包括：形成堆叠于第一介质部的光生少子收集区，其中，第一介质部具有第一导电类型，光生少子收集区具有第二导电类型，光生少子收集区具有至少一个网孔区域；以及形成覆盖光生少子收集区的钉扎层，钉扎层具有第一导电类型。该方法能够制造出暗电流与光量子效率两种性能平衡且总体性能好的光电二极管。