Preparation method of high-performance multi-element doped zinc oxide transparent conductive film

The invention provides a preparation method of a high-performance multi-element doped zinc oxide transparent conductive film, which is characterized in that a Ga2O3 and MgF2 co-doped ZnO composite ceramic target material is used as a raw material, and a ZnO transparent conductive film with excellent conductivity and high permeability in a visible light region is deposited on a substrate through a magnetron sputtering method. Compared with a traditional ZnO doping system, the method has the advantages that the requirement for the vacuum degree of the substrate is low (only 10 Pa), under the relatively low vacuum degree, the Ga/Mg/F ternary co-doped ZnO transparent conductive thin film can still play the synergistic effect of Ga/F elements and the function of expanding the forbidden band width of a material through Mg elements to keep good photoelectric performance, and the high-performance thin film is obtained. The method is low in requirement for the vacuum degree of the substrate, does not need anneal