Super junction deep groove device and manufacturing method thereof

The invention provides a super junction deep trench device and a manufacturing method thereof. The method comprises the following steps: forming a first doping type epitaxial layer on a substrate; forming a mask layer on the epitaxial layer, wherein the mask layer comprises a first oxide layer, a ni...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CAO WENKANG, CHEN HAITAO, ZHAO YI, LEE HYUN, CHEN SHUILIANG, FU XIAOGAN, LEE SU-JU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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