Preparation method of embedded resistor thin film material grown by magnetron sputtering

The invention relates to a preparation method of an embedded resistor thin-film material grown by magnetron sputtering, the surface area of a substrate can be reduced and the electrical performance can be improved by embedding a resistor into the substrate, the resistor with stable property is needed, and the performance of the resistor can be accurately predicted by the correlation between the technical parameters of thin-film resistor growth and the electrical characteristics of the thin-film resistor growth. Nickel and phosphorus are often used for manufacturing precision resistors, and the phosphorus content, the annealing temperature and the film thickness have huge influence on the structure and the electrical performance of a nickel-phosphorus film. According to the research, the nickel-phosphorus thin film is grown in a magnetron sputtering mode, and the amorphous thin film resistor which is stable relative to temperature, large in square resistance range and smooth in surface is obtained by changing